SCHEMBL1417509

SCHEMBL1417509

Cc1ccccc1S(=O)(=O)O/N=C(\C#N)c1ccccc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ PLA2G7 Q13093 1/20 0.40
▸ KMT2A Q03164 4/20 0.39
▸ MAPT P10636 3/20 0.38
▸ CYP1A2 P05177 2/20 0.38
▸ CYP2C9 P11712 2/20 0.38
▸ CYP2C19 P33261 2/20 0.38
▸ MEN1 O00255 3/20 0.37
▸ ESR1 P03372 2/20 0.37
▸ ESR2 Q92731 2/20 0.37
▸ GAA P10253 1/20 0.37
▸ LMNA P02545 3/20 0.37
▸ TDP1 Q9NUW8 1/20 0.37
▸ POLB P06746 2/20 0.36
▸ ATM Q13315 1/20 0.36
▸ NPSR1 Q6W5P4 2/20 0.36
▸ CYP3A4 P08684 1/20 0.36
▸ CYP2D6 P10635 1/20 0.36
▸ RAB9A P51151 3/20 0.34
▸ NPC1 O15118 2/20 0.34
▸ ITGAV P06756 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27705172 1.00 PLA2G7 (0.40) PLA2G7KMT2AMAPTCYP1A2CYP2C9
SCHEMBL6809982 0.89 POLB (0.38) KMT2AMAPTCYP1A2MEN1ESR1
SCHEMBL28493343 0.85 MAPT (0.35) KMT2AMAPTCYP1A2CYP2C9CYP2C19
SCHEMBL7790657 0.83 P2RX7 (0.39) MAPTCYP1A2CYP2C9CYP2C19GAA
SCHEMBL7790655 0.83 P2RX7 (0.39) MAPTCYP1A2CYP2C9CYP2C19GAA
SCHEMBL5367442 0.81 F2 (0.40) PLA2G7MAPTCYP1A2CYP2C9CYP2C19
SCHEMBL6741146 0.81 F2 (0.40) PLA2G7MAPTCYP1A2CYP2C9CYP2C19
SCHEMBL29761878 0.81 F2 (0.40) PLA2G7MAPTCYP1A2CYP2C9CYP2C19
SCHEMBL92016 0.81 KDM4E (0.49) PLA2G7KMT2AMAPTMEN1LMNA
SCHEMBL7976575 0.81 KDM4E (0.49) PLA2G7KMT2AMAPTMEN1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108073042-B Positive photosensitive resin composition 株式会社东进世美肯 2024-01-23 — — CN disclosed
EP-2299325-A1 Resist composition, resist pattern forming method and compound Tokyo Ohka Kogyo Co., Ltd. (JP) 2011-03-23 — — EP disclosed
US-6835530-B2 Base material for lithography TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-28 — — US disclosed
US-20040121260-A1 Base material for lithography TOKYO OHKA KOGYO CO., LTD. 2004-06-24 — — US disclosed
US-6268108-B1 MIXTURE OF COMPOUND FORMING ACID UPON EXPOSURE OF ACTINIC RADIATION, COMPOUND CAPABLE OF CROSSLINKING, DYE AND SOLVENT TOKYO OHKA KOGYO CO., LTD. (JP) 2001-07-31 — — US disclosed
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