SCHEMBL6809982

SCHEMBL6809982

COc1ccc(/C(C#N)=N/OS(=O)(=O)c2ccccc2C)cc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ POLB P06746 2/20 0.38
▸ TRIM24 O15164 1/20 0.38
▸ BRD1 O95696 1/20 0.38
▸ BRPF1 P55201 1/20 0.38
▸ MAPT P10636 4/20 0.38
▸ CDK5 Q00535 2/20 0.38
▸ CDK5R1 Q15078 2/20 0.38
▸ PKM P14618 1/20 0.38
▸ RAB9A P51151 3/20 0.38
▸ NPC1 O15118 2/20 0.38
▸ KDM4E B2RXH2 2/20 0.38
▸ MEN1 O00255 1/20 0.38
▸ ESR1 P03372 1/20 0.38
▸ KMT2A Q03164 1/20 0.38
▸ ATM Q13315 1/20 0.38
▸ ESR2 Q92731 1/20 0.38
▸ L3MBTL1 Q9Y468 1/20 0.38
▸ ALDH1A1 P00352 2/20 0.37
▸ GAA P10253 1/20 0.37
▸ SMN1; SMN2 Q16637 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27705172 0.89 PLA2G7 (0.40) POLBMAPTRAB9ANPC1KDM4E
SCHEMBL1417509 0.89 PLA2G7 (0.40) POLBMAPTRAB9ANPC1KDM4E
SCHEMBL36764 0.87 KMT2A (0.42) MAPTRAB9ANPC1KDM4EMEN1
SCHEMBL36763 0.87 KMT2A (0.42) MAPTRAB9ANPC1KDM4EMEN1
SCHEMBL29359430 0.87 KMT2A (0.42) MAPTRAB9ANPC1KDM4EMEN1
SCHEMBL7790655 0.85 P2RX7 (0.39) POLBMAPTPKMRAB9ANPC1
SCHEMBL7790657 0.85 P2RX7 (0.39) POLBMAPTPKMRAB9ANPC1
SCHEMBL4350596 0.85 NPC1 (0.42) POLBMAPTRAB9ANPC1KDM4E
SCHEMBL30529837 0.85 NPC1 (0.42) POLBMAPTRAB9ANPC1KDM4E
SCHEMBL4350592 0.85 NPC1 (0.42) POLBMAPTRAB9ANPC1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108073042-B Positive photosensitive resin composition 株式会社东进世美肯 2024-01-23 — — CN disclosed
US-9946157-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-04-17 — — US disclosed
US-20160291464-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-10-06 — — US disclosed
US-6835530-B2 Base material for lithography TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-28 — — US disclosed
US-20040121260-A1 Base material for lithography TOKYO OHKA KOGYO CO., LTD. 2004-06-24 — — US disclosed
US-6268108-B1 MIXTURE OF COMPOUND FORMING ACID UPON EXPOSURE OF ACTINIC RADIATION, COMPOUND CAPABLE OF CROSSLINKING, DYE AND SOLVENT TOKYO OHKA KOGYO CO., LTD. (JP) 2001-07-31 — — US disclosed
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