SCHEMBL14500656

SCHEMBL14500656

Cc1ccc(S(=O)(=O)ON2C(=O)C3C4C=C[C@H](C4)C3C2=O)cc1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
VDR P11473 2/20 0.52
SMN1; SMN2 Q16637 3/20 0.46
LMNA P02545 1/20 0.46
ALDH1A1 P00352 4/20 0.46
KDM4E B2RXH2 2/20 0.46
HPGD P15428 1/20 0.46
MEN1 O00255 2/20 0.42
KMT2A Q03164 2/20 0.42
CYP3A4 P08684 1/20 0.40
TSHR P16473 1/20 0.40
CYP2C19 P33261 1/20 0.40
NPSR1 Q6W5P4 1/20 0.40
TDP1 Q9NUW8 1/20 0.40
NPC1 O15118 1/20 0.40
TP53 P04637 1/20 0.40
RAB9A P51151 1/20 0.40
PARL Q9H300 2/20 0.40
CA1 P00915 1/20 0.39
CA2 P00918 1/20 0.39
POLB P06746 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL382669 1.00 VDR (0.52) VDRSMN1; SMN2LMNAALDH1A1KDM4E
SCHEMBL12198606 0.91 VDR (0.52) VDRSMN1; SMN2LMNAALDH1A1KDM4E
SCHEMBL3189821 0.87 MEN1 (0.50) VDRSMN1; SMN2LMNAALDH1A1MEN1
SCHEMBL4827161 0.86 VDR (0.63) VDRSMN1; SMN2LMNAALDH1A1KDM4E
SCHEMBL13473215 0.86 ALDH1A1 (0.51) SMN1; SMN2ALDH1A1MEN1KMT2ACYP3A4
SCHEMBL13583550 0.85 PARL (0.57) VDRSMN1; SMN2ALDH1A1KDM4EHPGD
SCHEMBL4354758 0.84 VDR (0.51) VDRSMN1; SMN2LMNAALDH1A1KDM4E
SCHEMBL4835774 0.84 VDR (0.56) VDRSMN1; SMN2LMNAALDH1A1KDM4E
SCHEMBL548362 0.82 NOX4 (0.39) SMN1; SMN2LMNAALDH1A1MEN1KMT2A
SCHEMBL4330229 0.82 VDR (0.49) VDRSMN1; SMN2LMNAALDH1A1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070128541-A1 Materials for photoresist, negative-tone photoresist composition, method of forming resist pattern, and semiconductor device HITACHI, LTD. (JP) 2007-06-07 US disclosed