SCHEMBL382669

SCHEMBL382669

Cc1ccc(S(=O)(=O)ON2C(=O)C3C4C=CC(C4)C3C2=O)cc1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
VDR P11473 2/20 0.52
SMN1; SMN2 Q16637 3/20 0.46
LMNA P02545 1/20 0.46
ALDH1A1 P00352 4/20 0.46
KDM4E B2RXH2 2/20 0.46
HPGD P15428 1/20 0.46
MEN1 O00255 2/20 0.42
KMT2A Q03164 2/20 0.42
CYP3A4 P08684 1/20 0.40
TSHR P16473 1/20 0.40
CYP2C19 P33261 1/20 0.40
NPSR1 Q6W5P4 1/20 0.40
TDP1 Q9NUW8 1/20 0.40
NPC1 O15118 1/20 0.40
TP53 P04637 1/20 0.40
RAB9A P51151 1/20 0.40
PARL Q9H300 2/20 0.40
CA1 P00915 1/20 0.39
CA2 P00918 1/20 0.39
POLB P06746 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14500656 1.00 VDR (0.52) VDRSMN1; SMN2LMNAALDH1A1KDM4E
SCHEMBL12198606 0.91 VDR (0.52) VDRSMN1; SMN2LMNAALDH1A1KDM4E
SCHEMBL3189821 0.87 MEN1 (0.50) VDRSMN1; SMN2LMNAALDH1A1MEN1
SCHEMBL4827161 0.86 VDR (0.63) VDRSMN1; SMN2LMNAALDH1A1KDM4E
SCHEMBL13473215 0.86 ALDH1A1 (0.51) SMN1; SMN2ALDH1A1MEN1KMT2ACYP3A4
SCHEMBL13583550 0.85 PARL (0.57) VDRSMN1; SMN2ALDH1A1KDM4EHPGD
SCHEMBL4354758 0.84 VDR (0.51) VDRSMN1; SMN2LMNAALDH1A1KDM4E
SCHEMBL4835774 0.84 VDR (0.56) VDRSMN1; SMN2LMNAALDH1A1KDM4E
SCHEMBL548362 0.82 NOX4 (0.39) SMN1; SMN2LMNAALDH1A1MEN1KMT2A
SCHEMBL4330229 0.82 VDR (0.49) VDRSMN1; SMN2LMNAALDH1A1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 399 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2025041686-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE JSR株式会社 2025-02-27 WO disclosed
WO-2025041685-A1 PHOTOSENSITIVE RESIN COMPOSITION FOR PRODUCING PLATED MOLDED ARTICLE, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED MOLDED ARTICLE JSR株式会社 2025-02-27 WO disclosed
CN-111198480-B Photosensitive resin composition, pattern forming method and antireflection film 信越化学工业株式会社 2025-02-11 CN disclosed
US-20240352203-A1 FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE ADEKA CORPORATION (JP) 2024-10-24 US disclosed
CN-109976091-B Photosensitive resin composition, pattern forming method, and manufacture of optoelectronic semiconductor device 信越化学工业株式会社 2024-09-27 CN disclosed
WO-2024190595-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE JSR株式会社 2024-09-19 WO disclosed
US-20240219832-A1 PHOTOSENSITIVE COMPOSITION JSR CORPORATION (JP) 2024-07-04 US disclosed
US-20240199854-A1 COMPOSITION, CURED FILM, STRUCTURAL BODY, OPTICAL FILTER, SOLID-STATE IMAGING ELEMENT, IMAGE DISPLAY DEVICE, AND MANUFACTURING METHOD OF CURED FILM FUJIFLIM CORPORATION (JP) 2024-06-20 US disclosed
EP-4375750-A1 FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE ADEKA CORPORATION (JP) 2024-05-29 EP disclosed
EP-3010943-B1 CURABLE COMPOSITION, FILM, AND METHOD OF PRODUCING FILM CANON KK (JP) 2024-04-03 EP disclosed
US-6261738-B1 LATENT CURING CATALYSTS FOR PHOTORESISTS SUCH AS 2,2,2-TRIFLUORO-1-PHENYL-ETHANONE OXIME-O-METHYL SULFONATE CIBA SPECIALTY CHEMICALS CORPORATION 2001-07-17 US disclosed
US-RE37179-E1 ADDITION POLYMER JSR CORPORATION (JP) 2001-05-15 US disclosed
US-6143460-A PHOTOACID GENERATOR PROVIDING IMPROVED PHOTORESIST RESOLUTION JSR CORPORATION (JP) 2000-11-07 US disclosed
US-6120972-A COPOLYMER OF ACRYLIC ESTER AND CARBONATE WITH PHOTOACID GENERATOR FOR PHOTOSENSITIVE ELEMENTS JSR CORPORATION (JP) 2000-09-19 US disclosed
EP-0959389-A1 Diazodisulfone compound and radiation-sensitive resin composition JSR Corporation (JP) 1999-11-24 EP disclosed
EP-0901043-A1 Radiation-sensitive resin composition JSR Corporation (JP) 1999-03-10 EP disclosed
US-5679495-A TERPOLYMER PHOTORESIST CONTAINING VINYLPHENOL DERIVATIVE, TERT-BUTYL (METH)ACRYLATE, AND A UNIT TO REDUCE ALKALINE SOLUBILITY; DRY ETCH RESISTANCE JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1997-10-21 US disclosed
EP-0660187-B1 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO LTD (JP) 1997-03-05 EP disclosed
US-5556734-A RESISTS JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1996-09-17 US disclosed
EP-0660187-A1 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1995-06-28 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20240352203-A1 FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE FBXL19, SRSF9, CNOT9 VDR 4790/4885SMN1; SMN2 3513/4885LMNA 4319/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.