Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.40 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.32 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL92307 | 0.89 | ALDH1A1 (0.39) | ALDH1A1CYP3A4CYP2D6TSHRCYP2C19 | |
| SCHEMBL17921277 | 0.82 | ALDH1A1 (0.33) | ALDH1A1 | |
| SCHEMBL20099503 | 0.82 | — | — | |
| SCHEMBL120016 | 0.81 | ALDH1A1 (0.32) | ALDH1A1 | |
| SCHEMBL118664 | 0.81 | ALDH1A1 (0.32) | ALDH1A1 | |
| SCHEMBL11964232 | 0.81 | POLB (0.34) | ALDH1A1TSHR | |
| SCHEMBL121051 | 0.80 | ALDH1A1 (0.34) | ALDH1A1 | |
| SCHEMBL686176 | 0.80 | ALDH1A1 (0.32) | ALDH1A1 | |
| SCHEMBL12896248 | 0.79 | THRB (0.34) | ALDH1A1TSHR | |
| SCHEMBL501880 | 0.79 | GPX4 (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11774853-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-03 | — | — | US | disclosed |
| US-11774853-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-03 | — | — | US | disclosed |
| US-11415887-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-08-16 | — | — | US | disclosed |
| US-11187980-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-11-30 | — | — | US | disclosed |
| US-20200272048-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-08-27 | — | — | US | disclosed |
| US-20200241414-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-30 | — | — | US | disclosed |
| US-20200192222-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-06-18 | — | — | US | disclosed |
| US-20200073237-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-03-05 | — | — | US | disclosed |
| US-10474030-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-11-12 | — | — | US | disclosed |
| US-10423068-B2 | Active-light-sensitive or radiation-sensitive resin composition, active-light-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2019-09-24 | — | — | US | disclosed |
| US-20170174801-A1 | NON-CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION, NON-CHEMICAL AMPLIFICATION TYPE RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-20170176858-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-20170130070-A1 | CONDUCTIVE MATERIAL AND SUBSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170130070-A1 | CONDUCTIVE MATERIAL AND SUBSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170130071-A1 | CONDUCTIVE MATERIAL AND SUBSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170130071-A1 | CONDUCTIVE MATERIAL AND SUBSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-11 | — | — | US | disclosed |
| US-9360753-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-07 | — | — | US | disclosed |
| US-9360753-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-07 | — | — | US | disclosed |
| US-20130029270-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-31 | — | — | US | disclosed |
| US-20130029270-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-31 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200241414-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | INSR, HNRNPU, HNRNPR | ALDH1A1 4836/4885CYP3A4 4532/4885CYP2D6 4072/4885 |
| US-10474030-B2 | Resist composition and patterning process | CASR, HNRNPU, LBR | ALDH1A1 4848/4885CYP3A4 4842/4885CYP2D6 4229/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.