Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.33 |
| ▸ | MEN1 | O00255 | 1/20 | 0.33 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.32 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.32 |
| ▸ | GLA | P06280 | 1/20 | 0.31 |
| ▸ | HPGD | P15428 | 1/20 | 0.31 |
| ▸ | HTT | P42858 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17921277 | 0.92 | ALDH1A1 (0.33) | ALDH1A1KMT2AMEN1GLAHPGD | |
| SCHEMBL14666348 | 0.89 | ALDH1A1 (0.40) | ALDH1A1CYP3A4CYP2D6TSHRCYP2C19 | |
| SCHEMBL16187158 | 0.87 | KMT2A (0.33) | ALDH1A1KMT2AMEN1GLAHPGD | |
| SCHEMBL18365491 | 0.87 | TSHR (0.34) | ALDH1A1KMT2AMEN1TSHRHTT | |
| SCHEMBL17829491 | 0.85 | MEN1 (0.30) | KMT2AMEN1 | |
| SCHEMBL120016 | 0.84 | ALDH1A1 (0.32) | ALDH1A1 | |
| SCHEMBL118664 | 0.84 | ALDH1A1 (0.32) | ALDH1A1 | |
| SCHEMBL23963187 | 0.84 | KMT2A (0.33) | ALDH1A1KMT2AMEN1GLAHPGD | |
| SCHEMBL19139443 | 0.84 | KMT2A (0.33) | ALDH1A1KMT2AMEN1GLAHPGD | |
| SCHEMBL121051 | 0.83 | ALDH1A1 (0.34) | ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 388 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230296981-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-20230296980-A1 | RESIST MATERIAL AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-10509314-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-12-17 | — | — | US | disclosed |
| US-10222696-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-03-05 | — | — | US | disclosed |
| US-10191373-B2 | Method for producing polymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-01-29 | — | — | US | disclosed |
| US-10012903-B2 | Resist composition and pattern forming process | SHIN-ESTU CHEMICAL CO., LTD. (JP) | 2018-07-03 | — | — | US | disclosed |
| US-10012903-B2 | Resist composition and pattern forming process | SHIN-ESTU CHEMICAL CO., LTD. (JP) | 2018-07-03 | — | — | US | disclosed |
| US-10005868-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-10005868-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-10007178-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-20110177462-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-21 | — | — | US | disclosed |
| US-20110177462-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-21 | — | — | US | disclosed |
| US-20110129777-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-06-02 | — | — | US | disclosed |
| US-20110033803-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-02-10 | — | — | US | disclosed |
| US-20110033803-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-02-10 | — | — | US | disclosed |
| US-20100304297-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-12-02 | — | — | US | disclosed |
| US-20100227273-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-09-09 | — | — | US | disclosed |
| US-20100227274-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-09-09 | — | — | US | disclosed |
| US-20100159392-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-24 | — | — | US | disclosed |
| US-20090297979-A1 | Polymerizable compound, polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-03 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10509314-B2 | Resist composition and patterning process | SRMS, SLC11A2, PCNA | ALDH1A1 4490/4885KMT2A 2376/4885MEN1 3495/4885 |
| US-20090297979-A1 | Polymerizable compound, polymer, positive resist composition, and patterning process using the same | PRRC2A, PUF60, POLR2B | ALDH1A1 3867/4885KMT2A 496/4885MEN1 4377/4885 |
| US-10222696-B2 | Resist composition and patterning process | SLC11A2, GRN, PGF | ALDH1A1 4832/4885KMT2A 2626/4885MEN1 3472/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.