SCHEMBL14707486

SCHEMBL14707486

CC1=C(C)C(=O)N(OS(C)(=O)=O)C1=O

nearest known ligand 0.36

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
VDR P11473 1/20 0.36
KDM4E B2RXH2 6/20 0.33
MAPT P10636 5/20 0.33
ALDH1A1 P00352 5/20 0.33
HPGD P15428 4/20 0.33
KMT2A Q03164 4/20 0.33
F2 P00734 3/20 0.33
XBP1 P17861 2/20 0.33
HTT P42858 2/20 0.33
CYP1A2 P05177 1/20 0.33
CYP3A4 P08684 1/20 0.33
CYP2C19 P33261 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
MEN1 O00255 1/20 0.33
LMNA P02545 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
USP2 O75604 1/20 0.30
TSHR P16473 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL66141 0.73 KDM4E (0.61) VDRKDM4EMAPTALDH1A1HPGD
SCHEMBL2382893 0.73 VDR (0.33) VDRKDM4EMAPTALDH1A1HPGD
SCHEMBL5551755 0.70 KDM4E (0.41) VDRKDM4EMAPTALDH1A1HPGD
SCHEMBL4827266 0.70 USP2 (0.30) USP2TSHR
SCHEMBL13446336 0.70 PARL (0.36) USP2TSHR
SCHEMBL64828 0.70 PARL (0.50) USP2TSHR
SCHEMBL63146 0.70 MGLL (0.38) MAPTALDH1A1NPSR1LMNAUSP2
SCHEMBL5551952 0.69 MAPT (0.71) VDRKDM4EMAPTALDH1A1HPGD
SCHEMBL5556202 0.68 KDM4E (0.50) VDRKDM4EMAPTALDH1A1HPGD
SCHEMBL14509461 0.68 KMT2A (0.68) VDRKDM4EMAPTALDH1A1HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9086623-B2 Method of forming pattern, actinic-ray- or radiation-sensitive resin composition and actinic-ray- or radiation-sensitive film FUJIFILM CORPORATION (JP) 2015-07-21 US disclosed
US-9086623-B2 Method of forming pattern, actinic-ray- or radiation-sensitive resin composition and actinic-ray- or radiation-sensitive film FUJIFILM CORPORATION (JP) 2015-07-21 US disclosed
US-8753802-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-06-17 US disclosed
US-8753802-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-06-17 US disclosed
US-20130049149-A1 METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND ACTINIC-RAY- OR RADIATION-SENSITIVE FILM FUJIFILM CORPORATION (JP) 2013-02-28 US disclosed
US-20130049149-A1 METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND ACTINIC-RAY- OR RADIATION-SENSITIVE FILM FUJIFILM CORPORATION (JP) 2013-02-28 US disclosed
US-20130045365-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2013-02-21 US disclosed
US-20130045365-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2013-02-21 US disclosed