Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SLC6A9 | P48067 | 2/20 | 0.48 |
| ▸ | TDP1 | Q9NUW8 | 3/20 | 0.43 |
| ▸ | L3MBTL1 | Q9Y468 | 3/20 | 0.43 |
| ▸ | SLC6A4 | P31645 | 3/20 | 0.41 |
| ▸ | HTR2A | P28223 | 2/20 | 0.41 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.41 |
| ▸ | HTT | P42858 | 1/20 | 0.41 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.41 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.41 |
| ▸ | HTR1A | P08908 | 2/20 | 0.41 |
| ▸ | CYP2D6 | P10635 | 2/20 | 0.41 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.41 |
| ▸ | HTR3A | P46098 | 2/20 | 0.41 |
| ▸ | LMNA | P02545 | 1/20 | 0.41 |
| ▸ | MAPT | P10636 | 2/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.40 |
| ▸ | GAA | P10253 | 2/20 | 0.40 |
| ▸ | HPGD | P15428 | 1/20 | 0.40 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.40 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14654309 | 0.87 | TSHR (0.44) | SLC6A9TDP1L3MBTL1SLC6A4SMN1; SMN2 | |
| SCHEMBL30580501 | 0.85 | LTA4H (0.55) | SLC6A9L3MBTL1SLC6A4HTTCYP1A2 | |
| SCHEMBL30580493 | 0.84 | SLC6A9 (0.46) | SLC6A9TDP1L3MBTL1SLC6A4HTR2A | |
| SCHEMBL26068022 | 0.84 | SLC6A9 (0.46) | SLC6A9TDP1L3MBTL1SLC6A4HTR2A | |
| SCHEMBL30580502 | 0.83 | LMNA (0.50) | SLC6A9TDP1L3MBTL1SLC6A4SMN1; SMN2 | |
| SCHEMBL30580505 | 0.83 | L3MBTL1 (0.50) | SLC6A9TDP1L3MBTL1SLC6A4HTR2A | |
| SCHEMBL11019469 | 0.83 | MAOA (0.52) | TDP1SMN1; SMN2CYP1A2CYP3A4CYP2C9 | |
| SCHEMBL18648344 | 0.83 | SLC6A9 (0.45) | SLC6A9TDP1L3MBTL1SMN1; SMN2CYP1A2 | |
| SCHEMBL30580492 | 0.82 | SLC6A9 (0.51) | SLC6A9TDP1L3MBTL1SLC6A4SMN1; SMN2 | |
| SCHEMBL30580496 | 0.82 | ALDH1A1 (0.47) | SLC6A9L3MBTL1HTR1AHTR3AMAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116621745-A | (2-phenoxyphenyl) phenyl thioether compound and synthesis method thereof | 华北水利水电大学 | 2023-08-22 | — | — | CN | disclosed |
| US-9551933-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, using the same, pattern forming method, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9470980-B2 | Pattern-forming method, electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, resist film, manufacturing method of electronic device using them and electronic device | FUJIFILM CORPORATION (JP) | 2016-10-18 | — | — | US | disclosed |
| US-20160291461-A1 | PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, BLOCK COPOLYMER AND BLOCK COPOLYMER PRODUCTION METHOD | FUJIFILM CORPORATION (JP) | 2016-10-06 | — | — | US | disclosed |
| US-9448477-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, manufacturing method of electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-09-20 | — | — | US | disclosed |
| US-9448482-B2 | Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-09-20 | — | — | US | disclosed |
| US-9423690-B2 | Pattern forming method, electron beam-sensitive or extreme ultraviolet ray-sensitive resin composition, resist film, and method for manufacturing electronic device, and electronic device using the same | FUJIFILM CORPORATION (JP) | 2016-08-23 | — | — | US | disclosed |
| US-20160240816-A1 | LAMINATE, KIT FOR MANUFACTURING ORGANIC SEMICONDUCTOR, AND RESIST COMPOSITION FOR MANUFACTURING ORGANIC SEMICONDUCTOR | FUJIFILM CORPORATION (JP) | 2016-08-18 | — | — | US | disclosed |
| US-20160209747-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2016-07-21 | — | — | US | disclosed |
| US-20160147155-A1 | PATTERN FORMATION METHOD, ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PRODUCTION METHOD FOR ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-05-26 | — | — | US | disclosed |
| US-20150132688-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN | FUJIFILM CORPORATION (JP) | 2015-05-14 | — | — | US | disclosed |
| US-20150010855-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2015-01-08 | — | — | US | disclosed |
| US-20140349224-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-11-27 | — | — | US | disclosed |
| US-20140212811-A1 | PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-07-31 | — | — | US | disclosed |
| US-20140030643-A1 | ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2014-01-30 | — | — | US | disclosed |
| US-8637222-B2 | Negative resist pattern forming method, developer and negative chemical-amplification resist composition used therefor, and resist pattern | FUJIFILM CORPORATION (JP) | 2014-01-28 | — | — | US | disclosed |
| WO-2013125733-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-08-29 | — | — | WO | disclosed |
| WO-2013047092-A1 | PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-04-04 | — | — | WO | disclosed |
| WO-2013039243-A1 | PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-03-21 | — | — | WO | disclosed |
| US-20130045440-A1 | RESIST PATTERN FORMING METHOD, RESIST PATTERN, CROSSLINKING NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT, NANOIMPRINT MOLD, AND PHOTOMASK | FUJIFILM CORPORATION (JP) | 2013-02-21 | — | — | US | disclosed |