Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SIGMAR1 | Q99720 | 3/20 | 0.52 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.50 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.48 |
| ▸ | NAAA | Q02083 | 6/20 | 0.40 |
| ▸ | ASAH1 | Q13510 | 1/20 | 0.39 |
| ▸ | SPHK2 | Q9NRA0 | 4/20 | 0.38 |
| ▸ | SPHK1 | Q9NYA1 | 4/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29101112 | 0.97 | SIGMAR1 (0.56) | SIGMAR1CYP1A2EPHX1NAAAASAH1 | |
| SCHEMBL14740174 | 0.97 | SIGMAR1 (0.56) | SIGMAR1CYP1A2EPHX1NAAAASAH1 | |
| SCHEMBL14739553 | 0.92 | CYP1A2 (0.52) | SIGMAR1CYP1A2EPHX1NAAA | |
| SCHEMBL29101110 | 0.89 | CYP1A2 (0.56) | SIGMAR1CYP1A2EPHX1NAAA | |
| SCHEMBL9267046 | 0.89 | CYP1A2 (0.56) | SIGMAR1CYP1A2EPHX1NAAA | |
| SCHEMBL12371308 | 0.87 | SIGMAR1 (0.41) | SIGMAR1CYP1A2EPHX1NAAAASAH1 | |
| SCHEMBL23014720 | 0.87 | CYP1A2 (0.56) | SIGMAR1CYP1A2EPHX1NAAASPHK2 | |
| SCHEMBL31317651 | 0.86 | SIGMAR1 (0.42) | SIGMAR1CYP1A2EPHX1NAAASPHK2 | |
| SCHEMBL24489452 | 0.85 | CYP1A2 (0.54) | SIGMAR1CYP1A2EPHX1NAAA | |
| SCHEMBL324846 | 0.85 | SIGMAR1 (0.65) | SIGMAR1CYP1A2EPHX1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12631966-B2 | Method for forming photoresist patterns | SAMSUNG SDI CO., LTD. (KR) | 2026-05-19 | — | — | US | claimed |
| US-12590221-B2 | Resist topcoat composition, and method of forming patterns using the composition | SAMSUNG SDI CO., LTD. (KR) | 2026-03-31 | — | — | US | claimed |
| US-12554199-B2 | Resist topcoat composition, and method of forming patterns using the composition | SAMSUNG SDI CO., LTD. (KR) | 2026-02-17 | — | — | US | claimed |
| US-20230026721-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO., LTD. (KR) | 2023-01-26 | — | — | US | claimed |
| US-20230028244-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO., LTD. (KR) | 2023-01-26 | — | — | US | claimed |
| US-20230026579-A1 | METHOD FOR FORMING PHOTORESIST PATTERNS | SAMSUNG SDI CO., LTD. (KR) | 2023-01-26 | — | — | US | claimed |
| US-20230024422-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO., LTD. (KR) | 2023-01-26 | — | — | US | claimed |
| US-20230021469-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-01-26 | — | — | US | claimed |
| US-12631966-B2 | Method for forming photoresist patterns | SAMSUNG SDI CO., LTD. (KR) | 2026-05-19 | — | — | US | disclosed |
| US-12590221-B2 | Resist topcoat composition, and method of forming patterns using the composition | SAMSUNG SDI CO., LTD. (KR) | 2026-03-31 | — | — | US | disclosed |
| US-20260050212-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO LTD (KR) | 2026-02-19 | — | — | US | disclosed |
| US-12554199-B2 | Resist topcoat composition, and method of forming patterns using the composition | SAMSUNG SDI CO., LTD. (KR) | 2026-02-17 | — | — | US | disclosed |
| US-20260036906-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO LTD (KR) | 2026-02-05 | — | — | US | disclosed |
| US-20260003286-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO LTD (KR) | 2026-01-01 | — | — | US | disclosed |
| CN-107407886-A | Pattern formation method, Resist patterns, the manufacture method of electronic device and upper layer film formation composition | 富士胶片株式会社 | 2017-11-28 | — | — | CN | disclosed |
| CN-107207908-A | Soil resistance composition, the manufacture method of antifouling and antifouling | 琳得科株式会社 | 2017-09-26 | — | — | CN | disclosed |
| CN-106715619-A | Application solution for resist pattern coating | 日产化学工业株式会社 | 2017-05-24 | — | — | CN | disclosed |
| CN-103221437-B | Polymer compound and resist protective film composition for liquid immersion exposure process containing same | DONGJIN SEMICHEM CO.,LTD. (KR) | 2016-02-17 | — | — | CN | disclosed |
| US-9052600-B2 | Method for forming resist pattern and composition for forming protective film | JSR CORPORATION (JP) | 2015-06-09 | — | — | US | disclosed |
| US-20130059252-A1 | METHOD FOR FORMING RESIST PATTERN AND COMPOSITION FOR FORMING PROTECTIVE FILM | JSR CORPORATION (JP) | 2013-03-07 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230024422-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | TOP1, TOP2A, FTO | SIGMAR1 154/4885CYP1A2 1869/4885EPHX1 1030/4885 |
| US-12631966-B2 | Method for forming photoresist patterns | FTO, SOAT1, SOAT2 | SIGMAR1 109/4885CYP1A2 210/4885EPHX1 1589/4885 |
| US-12554199-B2 | Resist topcoat composition, and method of forming patterns using the composition | FGFR2, FGFR1, FDFT1 | SIGMAR1 644/4885CYP1A2 228/4885EPHX1 2868/4885 |
| US-20260036906-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | CPT1A, RER1, CPT1B | SIGMAR1 64/4885CYP1A2 816/4885EPHX1 2600/4885 |
| US-20260003286-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | RER1, CPT1A, SOAT1 | SIGMAR1 56/4885CYP1A2 1166/4885EPHX1 2463/4885 |
| US-20230021469-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | COL2A1, TOP1, TOP2A | SIGMAR1 772/4885CYP1A2 1087/4885EPHX1 2043/4885 |
| US-12590221-B2 | Resist topcoat composition, and method of forming patterns using the composition | RER1, TOP1, RRS1 | SIGMAR1 78/4885CYP1A2 1048/4885EPHX1 1015/4885 |
| US-20260050212-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | CPT1A, COL1A1, RCOR1 | SIGMAR1 76/4885CYP1A2 401/4885EPHX1 3161/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.