SCHEMBL14828488

SCHEMBL14828488

C=C(C)C(=O)OC(C)(c1ccc(C(F)(F)F)cc1)c1ccco1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPC1 O15118 3/20 0.37
RAB9A P51151 3/20 0.37
OPRM1 P35372 1/20 0.36
OPRD1 P41143 1/20 0.36
MAPT P10636 2/20 0.34
TSHR P16473 3/20 0.33
MGLL Q99685 1/20 0.33
GAA P10253 1/20 0.33
BACE1 P56817 1/20 0.33
AR P10275 1/20 0.32
NPSR1 Q6W5P4 2/20 0.32
USP2 O75604 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
ALDH1A1 P00352 2/20 0.32
NR4A1 P22736 1/20 0.32
NR4A2 P43354 1/20 0.32
NR4A3 Q92570 1/20 0.32
KDM4E B2RXH2 1/20 0.32
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14827336 0.90 MAPT (0.37) NPC1RAB9AMAPTTSHRNPSR1
SCHEMBL14827368 0.88 RAB9A (0.36) NPC1RAB9AMAPTTSHRGAA
SCHEMBL14828485 0.82 ALDH1A1 (0.44) NPC1RAB9ATSHRGAABACE1
SCHEMBL14828493 0.79 CES2 (0.33) MAPTBACE1NPSR1USP2ALDH1A1
SCHEMBL75128 0.78 MAPT (0.41) NPC1RAB9AMAPTTSHRGAA
SCHEMBL14828484 0.75 SRPK1 (0.35) RAB9AMAPTGAABACE1SMN1; SMN2
SCHEMBL14827400 0.74 CES2 (0.41) MAPTBACE1USP2ALDH1A1NR4A1
SCHEMBL14828490 0.74 CES2 (0.33) NPC1RAB9AMAPTBACE1NPSR1
SCHEMBL3180129 0.72 CYP2C19 (0.46) MAPTSMN1; SMN2ALDH1A1KDM4EKMT2A
SCHEMBL10040365 0.71 MAPT (0.38) NPC1RAB9AMAPTTSHRGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-20160048076-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-18 US disclosed
US-9201300-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-9140988-B2 Positive resist composition, monomer, polymer, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-22 US disclosed
US-9040223-B2 Resist composition, patterning process and polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-26 US disclosed
US-20140178818-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140178820-A1 RESIST COMPOSITION, PATTERNING PROCESS AND POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140162188-A1 POSITIVE RESIST COMPOSITION, MONOMER, POLYMER, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-12 US disclosed
US-20130084527-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed