SCHEMBL14828484

SCHEMBL14828484

C=C(C)C(=O)OC(C)(c1ccc(C(F)(F)F)cc1)c1cccs1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SRPK1 Q96SB4 1/20 0.35
MEN1 O00255 1/20 0.35
KMT2A Q03164 1/20 0.35
TRPM8 Q7Z2W7 1/20 0.35
TRPA1 O75762 2/20 0.34
RAB9A P51151 2/20 0.34
BACE1 P56817 1/20 0.33
GAA P10253 3/20 0.33
MAPT P10636 3/20 0.33
TP53 P04637 2/20 0.33
NR1H2 P55055 1/20 0.33
NR4A1 P22736 1/20 0.33
NR4A2 P43354 1/20 0.33
NR4A3 Q92570 1/20 0.33
CES2 O00748 1/20 0.33
CES1 P23141 1/20 0.33
POLB P06746 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
MAPK8 P45983 1/20 0.32
MAPK10 P53779 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14827337 0.91 MAPT (0.33) MEN1KMT2ATRPM8RAB9AGAA
SCHEMBL14827362 0.90 SMN1; SMN2 (0.41) MEN1KMT2ATRPM8RAB9AGAA
SCHEMBL14828485 0.83 ALDH1A1 (0.44) RAB9ABACE1GAANR4A1NR4A2
SCHEMBL14828490 0.80 CES2 (0.33) MEN1KMT2ARAB9ABACE1MAPT
SCHEMBL20887795 0.77 RIPK1 (0.36) KMT2ARAB9AMAPTTP53
SCHEMBL9074707 0.76 LMNA (0.34) KMT2AGAAMAPTCES2CES1
SCHEMBL14828488 0.75 NPC1 (0.37) MEN1KMT2ARAB9ABACE1GAA
SCHEMBL14827400 0.75 CES2 (0.41) BACE1MAPTNR4A1NR4A2NR4A3
SCHEMBL14828493 0.75 CES2 (0.33) BACE1MAPTNR4A1NR4A2NR4A3
SCHEMBL3180129 0.73 CYP2C19 (0.46) KMT2AMAPTCES1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-20160048076-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-18 US disclosed
US-9201300-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-9140988-B2 Positive resist composition, monomer, polymer, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-22 US disclosed
US-9040223-B2 Resist composition, patterning process and polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-26 US disclosed
US-20140178818-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140178820-A1 RESIST COMPOSITION, PATTERNING PROCESS AND POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140162188-A1 POSITIVE RESIST COMPOSITION, MONOMER, POLYMER, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-12 US disclosed
US-20130084527-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed