SCHEMBL14828490

SCHEMBL14828490

C=C(C)C(=O)OC(C)(c1ccc(C(F)(F)F)cc1)c1ccsc1

nearest known ligand 0.33

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CES2 O00748 1/20 0.33
CES1 P23141 1/20 0.33
NR4A1 P22736 1/20 0.33
NR4A2 P43354 1/20 0.33
NR4A3 Q92570 1/20 0.33
NPC1 O15118 1/20 0.33
RAB9A P51151 1/20 0.33
ALDH1A1 P00352 4/20 0.32
MAPT P10636 2/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
MAOB P27338 1/20 0.32
TRPV1 Q8NER1 1/20 0.32
CCR2 P41597 1/20 0.32
BACE1 P56817 1/20 0.32
EPHX2 P34913 1/20 0.31
NPSR1 Q6W5P4 2/20 0.31
KDM4E B2RXH2 1/20 0.31
USP2 O75604 1/20 0.31
HPGD P15428 1/20 0.31
CYP2C19 P33261 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14827341 0.89 NPC1 (0.33) NPC1RAB9AMAPTL3MBTL1MEN1
SCHEMBL14827349 0.88 NPC1 (0.33) NPC1RAB9AMAPT
SCHEMBL14828485 0.81 ALDH1A1 (0.44) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL14828484 0.80 SRPK1 (0.35) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL14827400 0.76 CES2 (0.41) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL14828493 0.76 CES2 (0.33) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL14828488 0.74 NPC1 (0.37) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL14828592 0.73 NPSR1 (0.40) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL14828586 0.71 NR4A1 (0.40) CES2CES1NR4A1NR4A2NR4A3
SCHEMBL14827337 0.71 MAPT (0.33) NPC1RAB9AMAPTL3MBTL1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-20160048076-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-18 US disclosed
US-9201300-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-9140988-B2 Positive resist composition, monomer, polymer, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-22 US disclosed
US-9040223-B2 Resist composition, patterning process and polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-26 US disclosed
US-20140178818-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140178820-A1 RESIST COMPOSITION, PATTERNING PROCESS AND POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140162188-A1 POSITIVE RESIST COMPOSITION, MONOMER, POLYMER, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-12 US disclosed
US-20130084527-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed