SCHEMBL15216281

SCHEMBL15216281

O=C(OC(C(F)(F)F)C(F)(F)S(=O)(=O)O)c1cc[nH]c1

nearest known ligand 0.33

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
SIRT2 Q8IXJ6 1/20 0.33
EPHX2 P34913 1/20 0.31
GABRA1 P14867 2/20 0.31
GABRG2 P18507 2/20 0.31
GABRB3 P28472 2/20 0.31
GABRA5 P31644 2/20 0.31
GABRA3 P34903 2/20 0.31
GABRA2 P47869 2/20 0.31
GABRA4 P48169 2/20 0.31
GABRA6 Q16445 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26063406 0.84 SIRT2 (0.33) SIRT2EPHX2
SCHEMBL382685 0.79 TSHR (0.47) GABRA1GABRG2GABRB3GABRA5GABRA3
SCHEMBL6449938 0.78 TSHR (0.42) EPHX2
SCHEMBL482458 0.78 TSHR (0.46) GABRA1GABRG2GABRB3GABRA5GABRA3
Hydrogen Sulfide SCHEMBL2882266 0.78 TSHR (0.46) GABRA1GABRG2GABRB3GABRA5GABRA3
SCHEMBL18785726 0.78 CA12 (0.49)
SCHEMBL18785976 0.78 MAPT (0.37)
SCHEMBL18785970 0.77 CES2 (0.44)
SCHEMBL15216335 0.77 LMNA (0.39)
SCHEMBL18785819 0.77 GABRA1 (0.38) GABRA1GABRG2GABRB3GABRA5GABRA3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11579529-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-02-14 US disclosed
US-20200285152-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-09-10 US disclosed
US-8900796-B2 Acid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-02 US disclosed
US-8900796-B2 Acid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-02 US disclosed
US-20130224657-A1 ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 US disclosed
US-20130224657-A1 ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20200285152-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS POLR1C, EWSR1, LBR SIRT2 4535/4885EPHX2 4525/4885GABRA1 2282/4885
US-11579529-B2 Positive resist composition and patterning process POLR1C, EWSR1, LBR SIRT2 4535/4885EPHX2 4525/4885GABRA1 2282/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.