SCHEMBL1533097

SCHEMBL1533097

O=C1CCC(=O)N1O.O=S(=O)(O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.37

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
CA2 P00918 4/20 0.37
CA1 P00915 3/20 0.37
MMP1 P03956 3/20 0.37
MMP2 P08253 3/20 0.37
MMP9 P14780 3/20 0.37
MMP8 P22894 3/20 0.37
MMP13 P45452 3/20 0.37
F2 P00734 3/20 0.34
PRSS1 P07477 3/20 0.34
PRSS2 P07478 3/20 0.34
PRSS3 P35030 3/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1533057 0.98 CA2 (0.39) CA2CA1MMP1MMP2MMP9
Trifluoromethanesulfonic Acid SCHEMBL64813 0.81 ALDH1A1 (0.31)
SCHEMBL30354089 0.78 CA2 (0.54) CA2CA1MMP1MMP2MMP9
SCHEMBL23932 0.78 CA2 (0.54) CA2CA1MMP1MMP2MMP9
SCHEMBL24140 0.76 CA2 (0.56) CA2CA1MMP1MMP2MMP9
SCHEMBL6916713 0.76 CA2 (0.52) CA2CA1MMP1MMP2MMP9
Fluoride SCHEMBL1995965 0.76 CA2 (0.52) CA2CA1MMP1MMP2MMP9
SCHEMBL6912911 0.76 CA2 (0.52) CA2CA1MMP1MMP2MMP9
SCHEMBL21802716 0.76 CA2 (0.52) CA2CA1MMP1MMP2MMP9
SCHEMBL5960730 0.76 CA2 (0.52) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 58 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250244664-A1 PHOTORESIST COMPOSITIONS AND PATTERNING METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2025-07-31 US claimed
US-20250102910-A1 PHOTORESIST COMPOSITION AND METALLIZATION METHOD U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2025-03-27 US claimed
CN-119322427-A Photoresist composition and metallization method 杜邦电子材料国际有限责任公司 2025-01-17 CN claimed
CN-109154776-B Chemically amplified negative photoresist composition 荣昌化学制品株式会社 2022-06-28 CN claimed
CN-108267933-B Radiation-sensitive composition and patterning and metallization process 罗门哈斯电子材料有限责任公司 2021-12-03 CN claimed
US-10962880-B2 Radiation-sensitive compositions and patterning and metallization processes ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2021-03-30 US claimed
US-20200201175-A1 RADIATION-SENSITIVE COMPOSITIONS AND PATTERNING AND METALLIZATION PROCESSES U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2020-06-25 US claimed
US-20180188648-A1 RADIATION-SENSITIVE COMPOSITIONS AND PATTERNING AND METALLIZATION PROCESSES U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2018-07-05 US claimed
EP-3343293-A1 RADIATION-SENSITIVE COMPOSITIONS AND PATTERNING AND METALLIZATION PROCESSES Rohm and Haas Electronic Materials LLC (US) 2018-07-04 EP claimed
US-12512430-B2 Metallization method DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC (US) 2025-12-30 US disclosed
US-20250244664-A1 PHOTORESIST COMPOSITIONS AND PATTERNING METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2025-07-31 US disclosed
US-20250102910-A1 PHOTORESIST COMPOSITION AND METALLIZATION METHOD U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2025-03-27 US disclosed
CN-119644670-A Photoresist composition and method of forming pattern using the same 三星电子株式会社 2025-03-18 CN disclosed
CN-119322427-A Photoresist composition and metallization method 杜邦电子材料国际有限责任公司 2025-01-17 CN disclosed
EP-1085379-B1 Radiation-sensitive resin composition JSR CORP (JP) 2006-01-04 EP disclosed
US-6800419-B2 FOR USE AS CHEMICALLY-AMPLIFIED RESIST FOR MICROFABRICATION UTILIZING DEEP ULTRAVIOLET RAYS AND EXHIBITS EXCELLENT FILM THICKNESS UNIFORMITY AND STORAGE STABILITY JSR CORPORATION (JP) 2004-10-05 US disclosed
US-20040072094-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2004-04-15 US disclosed
US-20030203307-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-30 US disclosed
US-6482568-B1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-11-19 US disclosed
EP-1085379-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-03-21 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12512430-B2 Metallization method CUTA, AS3MT, METTL14 CA2 3314/4885CA1 1918/4885MMP1 1997/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.