Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL64813

O=C1CCC(=O)N1O.O=S(=O)(O)C(F)(F)F

nearest known ligand 0.31

Full drug profile on Sugi Atlas →

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Sulfuric Acid SCHEMBL4450384 0.83 CA5A (0.35)
SCHEMBL1533097 0.81 CA2 (0.37)
Trifluoromethanesulfonic Acid SCHEMBL542504 0.80 ALDH1A1 (0.30) ALDH1A1L3MBTL1
SCHEMBL1533057 0.79 CA2 (0.39)
SCHEMBL64827 0.78 PARL (0.31)
SCHEMBL1123 0.77
SCHEMBL785147 0.77
SCHEMBL28950377 0.74 PARL (0.31)
SCHEMBL64832 0.74 KMT2A (0.30)
Trifluoroacetic Acid SCHEMBL504170 0.74 CA12 (0.32) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1109 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250377591-A1 PHOTORESIST COMPOSITION AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO LTD (KR) 2025-12-11 US claimed
US-20240294771-A1 ANTI-REFLECTIVE COATING COMPOSITION AND CROSSLINKABLE POLYMER Tan Kah Kee Innovation Laboratory (CN) 2024-09-05 US claimed
CN-110832397-B Composition for forming resist underlayer film, and method for forming resist pattern 日产化学株式会社 2023-12-15 CN claimed
CN-113913075-B Anti-reflective coating composition and crosslinkable polymer 嘉庚创新实验室 2022-09-20 CN claimed
CN-111880371-B Photoresist and method for patterning imine material 常州华睿芯材科技有限公司 2022-05-03 CN claimed
CN-113913075-A Anti-reflective coating composition and crosslinkable polymer 嘉庚创新实验室 2022-01-11 CN claimed
CN-111880371-A Photoresist and method for patterning imine material 清华大学 2020-11-03 CN claimed
US-10345701-B2 Photoresist polymers, photoresist compositions, methods of forming patterns and methods of manufacturing semiconductor devices SAMSUNG ELECTRONICS CO., LTD. (KR) 2019-07-09 US claimed
US-7670748-B2 Cyclic compound, photoresist composition and method of forming a photoresist pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-03-02 US claimed
US-7494761-B2 Cyclodextrin derivative, photoresist composition including the cyclodextrin derivative and method of forming a pattern using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-02-24 US claimed
US-20030157430-A1 Fluorine-containing photosensitive polymer having hydrate structure and resist composition comprising the same SAMSUNG ELECTRONICS CO., LTD. 2003-08-21 US claimed
US-6537727-B2 Improved dry etching resistance, adhesiveness to underlying material layers, line edge roughness of line patterns, contrast characteristics SAMSUNG ELECTRONICS CO., LTD. (KR) 2003-03-25 US claimed
US-6497987-B1 MIXTURES OF POLYETHERS, ACID GENERATORS AND AMINES THAT MAINTAIN TRANSPARENCY WHEN EXPOSED TO SHORT-WAVELENGTH LIGHT AND HAVE IMPROVED ADHESION TO FILMS, SOLUBILITY TO DEVELOPERS AND ETCH SELECTIVITY; PHOTOLITHOGRAPHY SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-12-24 US claimed
US-20020177067-A1 Fluoro-containing photosensitive polymer and photoresist composition containing the same SAMSUNG ELECTRONICS CO., LTD. 2002-11-28 US claimed
US-20020160303-A1 Ether monomers and polymers having multi-ring structures, and photosensitive polymers and resist compositions obtained from the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-10-31 US claimed
US-20020155379-A1 Photosensitive monomer, photosensitive polymer and chemically amplified resist composition comprising lactone group having acid-labile protecting group SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-10-24 US claimed
US-20020146642-A1 Photosensitive polymers and resist compositions comprising the photosensitive polymers SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-10-10 US claimed
US-20020042016-A1 Resist composition comprising photosensitive polymer having loctone in its backbone SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-04-11 US claimed
US-20010024763-A1 Photosensitive polymer including copolymer of alkyl vinyl ether and resist composition containing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2001-09-27 US claimed
US-5621019-A PHOTORESIST CONTAINING PHOTO ACID GENERATOR AND ULTRAVIOLET RADIATION TRANSPARENT ACRYLIC POLYMER HAVING BRIDGED CYCLOHYDROCARBON GROUP RESIDUE; RESOLUTION, DRY ETCH RESISTANCE NEC CORPORATION (JP) 1997-04-15 US claimed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020160303-A1 Ether monomers and polymers having multi-ring structures, and photosensitive polymers and resist compositions obtained from the same PAH, SUV39H1, SUV39H2 ALDH1A1 2217/4885L3MBTL1 3247/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.