Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.50 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.48 |
| ▸ | TSHR | P16473 | 3/20 | 0.44 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.44 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.44 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.44 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.44 |
| ▸ | GALR3 | O60755 | 1/20 | 0.42 |
| ▸ | MAPT | P10636 | 1/20 | 0.42 |
| ▸ | BLM | P54132 | 1/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.34 |
| ▸ | PLA2G2C | Q5R387 | 1/20 | 0.33 |
| ▸ | ADRA1D | P25100 | 1/20 | 0.33 |
| ▸ | PTAFR | P25105 | 1/20 | 0.33 |
| ▸ | HTR1D | P28221 | 1/20 | 0.33 |
| ▸ | HTR2C | P28335 | 1/20 | 0.33 |
| ▸ | ADRA1B | P35368 | 1/20 | 0.33 |
| ▸ | DRD3 | P35462 | 1/20 | 0.33 |
| ▸ | TMEM97 | Q5BJF2 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL105187 | 0.98 | TDP1 (0.52) | TDP1HSD17B10TSHRCHRM2CHRM4 | |
| Propylene Glycol SCHEMBL154787 | 0.91 | TDP1 (0.51) | TDP1HSD17B10TSHRCHRM2CHRM4 | |
| SCHEMBL896812 | 0.91 | TDP1 (0.59) | TDP1HSD17B10TSHRCHRM2CHRM4 | |
| SCHEMBL15259597 | 0.91 | TDP1 (0.46) | TDP1HSD17B10TSHRCHRM2CHRM4 | |
| SCHEMBL487418 | 0.91 | TDP1 (0.59) | TDP1HSD17B10TSHRCHRM2CHRM4 | |
| SCHEMBL15333361 | 0.88 | TDP1 (0.43) | TDP1HSD17B10TSHRCHRM2CHRM4 | |
| SCHEMBL21357986 | 0.88 | ALDH1A1 (0.48) | TDP1HSD17B10TSHRCHRM2CHRM4 | |
| SCHEMBL107643 | 0.86 | ALDH1A1 (0.47) | TDP1TSHRCHRM2CHRM4CHRM1 | |
| SCHEMBL2230535 | 0.85 | PLA2G2C (0.49) | PLA2G2CADRA1DPTAFRHTR1DHTR2C | |
| Water SCHEMBL27447449 | 0.85 | ALDH1A1 (0.45) | TDP1TSHRCHRM2CHRM4CHRM1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114660896-B | Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound | 信越化学工业株式会社 | 2024-06-11 | — | — | CN | disclosed |
| US-12001138-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-04 | — | — | US | disclosed |
| US-11934100-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-03-19 | — | — | US | disclosed |
| EP-3680275-B1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2024-03-06 | — | — | EP | disclosed |
| EP-3796086-B1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2024-02-28 | — | — | EP | disclosed |
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-19 | — | — | US | disclosed |
| US-20230305405-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| EP-4250008-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-27 | — | — | EP | disclosed |
| CN-116804825-A | Composition for forming silicon-containing metal hard mask and pattern forming method | 信越化学工业株式会社 | 2023-09-26 | — | — | CN | disclosed |
| CN-111423587-A | Thermosetting silicon-containing compound, composition for forming silicon-containing film, and method for forming pattern | 信越化学工业株式会社 | 2020-07-17 | — | — | CN | disclosed |
| EP-3680275-A1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2020-07-15 | — | — | EP | disclosed |
| US-20200216670-A1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-09 | — | — | US | disclosed |
| CN-111208710-A | Iodine-containing thermosetting silicon-containing material, resist underlayer film-forming composition for extreme ultraviolet lithography containing the same, and pattern formation method | 信越化学工业株式会社 | 2020-05-29 | — | — | CN | disclosed |
| EP-3657254-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2020-05-27 | — | — | EP | disclosed |
| US-20200159120-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-05-21 | — | — | US | disclosed |
| EP-2657767-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2018-10-10 | — | — | EP | disclosed |
| US-8992790-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-31 | — | — | US | disclosed |
| US-20130284699-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-10-31 | — | — | US | disclosed |
| EP-2657767-A1 | Patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2013-10-30 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200159120-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | RPS4X, SIK3, MLX | TDP1 2821/4885HSD17B10 4306/4885TSHR 439/4885 |
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | RPS4X, SIK3, MLX | TDP1 2821/4885HSD17B10 4306/4885TSHR 439/4885 |
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | TDP1 2821/4885HSD17B10 4306/4885TSHR 439/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.