Known targets — ChEMBL curated mechanism
GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.50 |
| ▸ | BBOX1 | O75936 | 2/20 | 0.41 |
| ▸ | TP53 | P04637 | 1/20 | 0.38 |
| ▸ | LMNA | P02545 | 4/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.37 |
| ▸ | APOBEC3A | P31941 | 2/20 | 0.37 |
| ▸ | APOBEC3G | Q9HC16 | 2/20 | 0.37 |
| ▸ | CHRNB2 | P17787 | 2/20 | 0.36 |
| ▸ | CHRNA4 | P43681 | 2/20 | 0.36 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.36 |
| ▸ | HPGD | P15428 | 1/20 | 0.36 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.34 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.34 |
| ▸ | CHRM5 | P08912 | 1/20 | 0.34 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.34 |
| ▸ | CHRM3 | P20309 | 1/20 | 0.34 |
| ▸ | CHRNA7 | P36544 | 4/20 | 0.33 |
| ▸ | TSHR | P16473 | 2/20 | 0.33 |
| ▸ | CTDSP1 | Q9GZU7 | 2/20 | 0.33 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL15364815 | 0.97 | KDM4E (0.46) | KDM4EBBOX1TP53LMNAKMT2A | |
| SCHEMBL222638 | 0.97 | KDM4E (0.52) | KDM4EBBOX1TP53LMNAKMT2A | |
| Fluoride Ion SCHEMBL1977758 | 0.94 | KDM4E (0.50) | KDM4EBBOX1TP53LMNAKMT2A | |
| Iodide SCHEMBL16107572 | 0.94 | KDM4E (0.56) | KDM4EBBOX1TP53LMNAKMT2A | |
| Hydrochloric Acid SCHEMBL16931602 | 0.94 | KDM4E (0.50) | KDM4EBBOX1TP53LMNAKMT2A | |
| Bromide SCHEMBL1976599 | 0.94 | KDM4E (0.50) | KDM4EBBOX1TP53LMNAKMT2A | |
| SCHEMBL302222 | 0.94 | — | — | |
| Bromide SCHEMBL2191358 | 0.92 | KDM4E (0.46) | KDM4EBBOX1TP53LMNAKMT2A | |
| Hydrochloric Acid SCHEMBL715359 | 0.92 | BBOX1 (0.46) | KDM4EBBOX1TP53LMNAKMT2A | |
| Ammonia Solution, Strong SCHEMBL17998010 | 0.92 | KDM4E (0.46) | KDM4EBBOX1TP53LMNAKMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 92 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10228621-B2 | Underlayer film-forming composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-03-12 | — | — | US | claimed |
| EP-2813890-B1 | Photoresist underlayer film-forming composition and pattern forming processes | SHINETSU CHEMICAL CO (JP) | 2018-05-30 | — | — | EP | claimed |
| EP-2813889-B1 | Photoresist underlayer film-forming composition and pattern forming process | SHINETSU CHEMICAL CO (JP) | 2018-02-07 | — | — | EP | claimed |
| EP-2813891-B1 | Photoresist underlayer film-forming composition and pattern forming process | SHINETSU CHEMICAL CO (JP) | 2018-01-17 | — | — | EP | claimed |
| US-9136121-B2 | Underlayer film-forming composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-09-15 | — | — | US | claimed |
| US-9136122-B2 | Underlayer film-forming composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-09-15 | — | — | US | claimed |
| US-9052602-B2 | Developer for photosensitive resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-09 | — | — | US | claimed |
| US-20140370441-A1 | DEVELOPER FOR PHOTOSENSITIVE RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-18 | — | — | US | claimed |
| EP-2813891-A2 | Photoresist underlayer film-forming composition and pattern forming process | Shin-Etsu Chemical Co., Ltd. (JP) | 2014-12-17 | — | — | EP | claimed |
| EP-2813889-A2 | Photoresist underlayer film-forming composition and pattern forming process | Shin-Etsu Chemical Co., Ltd. (JP) | 2014-12-17 | — | — | EP | claimed |
| EP-2813892-A2 | Photoresist underlayer film-forming composition and pattern forming process | Shin-Etsu Chemical Co., Ltd. (JP) | 2014-12-17 | — | — | EP | claimed |
| EP-2813890-A2 | Photoresist underlayer film-forming composition and pattern forming process | Shin-Etsu Chemical Co., Ltd. (JP) | 2014-12-17 | — | — | EP | claimed |
| US-20140363958-A1 | UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-11 | — | — | US | claimed |
| US-20140363956-A1 | UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-11 | — | — | US | claimed |
| US-20140363957-A1 | UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-11 | — | — | US | claimed |
| US-20140363955-A1 | UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-11 | — | — | US | claimed |
| US-20260118764-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2026-04-30 | — | — | US | disclosed |
| US-12585188-B2 | Composition for forming resist underlying film | NISSAN CHEMICAL CORPORATION (JP) | 2026-03-24 | — | — | US | disclosed |
| US-20130323155-A1 | PROCESS FOR PRODUCING FLUORINE-CONTAINING SULFONYLIMIDE SALT | NIPPON SODA CO., LTD. (JP) | 2013-12-05 | — | — | US | disclosed |
| EP-2662332-A1 | MANUFACTURING METHOD FOR FLUORINE-CONTAINING SULFONYL IMIDE SALT | Nippon Soda Co., Ltd. (JP) | 2013-11-13 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260118764-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM | SRSF1, MACF1, SRPK1 | KDM4E 63/4885BBOX1 4529/4885TP53 2101/4885 |
| US-12585188-B2 | Composition for forming resist underlying film | SRR, SMC1A, ASH2L | KDM4E 550/4885BBOX1 2111/4885TP53 4706/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.