Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PKM | P14618 | 3/20 | 0.47 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.47 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.43 |
| ▸ | ACHE | P22303 | 8/20 | 0.41 |
| ▸ | GAA | P10253 | 3/20 | 0.41 |
| ▸ | CA1 | P00915 | 3/20 | 0.41 |
| ▸ | CA2 | P00918 | 3/20 | 0.41 |
| ▸ | MMP1 | P03956 | 1/20 | 0.41 |
| ▸ | MMP2 | P08253 | 1/20 | 0.41 |
| ▸ | MMP9 | P14780 | 1/20 | 0.41 |
| ▸ | MMP8 | P22894 | 1/20 | 0.41 |
| ▸ | MMP13 | P45452 | 1/20 | 0.41 |
| ▸ | CA9 | Q16790 | 2/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.40 |
| ▸ | NPC1 | O15118 | 1/20 | 0.40 |
| ▸ | PKLR | P30613 | 1/20 | 0.40 |
| ▸ | RAB9A | P51151 | 1/20 | 0.40 |
| ▸ | CA12 | O43570 | 1/20 | 0.39 |
| ▸ | CA7 | P43166 | 1/20 | 0.39 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL361656 | 0.94 | KCNH2 (0.46) | PKMKCNH2HSD11B1ACHEGAA | |
| Trifluoromethanesulfonic Acid SCHEMBL5828338 | 0.89 | PKM (0.47) | PKMKCNH2HSD11B1ACHEGAA | |
| Trifluoromethanesulfonic Acid SCHEMBL30631665 | 0.88 | KCNH2 (0.48) | PKMKCNH2HSD11B1CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL30631664 | 0.85 | KEAP1 (0.44) | KCNH2GAAMMP1MMP9MMP13 | |
| Trifluoromethanesulfonic Acid SCHEMBL5774894 | 0.85 | KDM4E (0.49) | CA1CA2MMP2MMP8MMP13 | |
| SCHEMBL6865932 | 0.84 | HSD11B1 (0.40) | PKMKCNH2HSD11B1GAACA1 | |
| SCHEMBL2922351 | 0.83 | HSD11B1 (0.40) | PKMKCNH2HSD11B1GAACA1 | |
| Trifluoromethanesulfonic Acid SCHEMBL756610 | 0.80 | EDNRA (0.43) | PKMHSD11B1GAAMMP1MMP2 | |
| SCHEMBL1804138 | 0.80 | ALDH1A1 (0.38) | PKMKCNH2HSD11B1GAAMMP1 | |
| SCHEMBL3831580 | 0.80 | PKM (0.36) | PKMKCNH2HSD11B1GAACA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-111410603-B | Benzanthrone derivative, preparation method thereof and application thereof in functional pigment | 上海甘田光学材料有限公司 | 2022-12-16 | — | — | CN | disclosed |
| WO-2022168632-A1 | PHOTOACID GENERATOR AND RESIN COMPOSITION FOR PHOTOLITHOGRAPHY | サンアプロ株式会社 | 2022-08-11 | — | — | WO | disclosed |
| US-8377704-B2 | Detection and quantification of anions | NUTECH VENTURES (US) | 2013-02-19 | — | — | US | disclosed |
| US-20110091982-A1 | Detection and Quantification of Anions | NUTECH VENTURES | 2011-04-21 | — | — | US | disclosed |
| US-20070122744-A1 | Positive-working photoresist composition and photosensitive material using same | MAEMORI SATOSHI | 2007-05-31 | — | — | US | disclosed |
| US-20050037291-A1 | Method for forming fine resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-02-17 | — | — | US | disclosed |
| US-6818380-B2 | DECREASING NUMBER OF DEFECTS BY USING PHOTORESIST OF AQUEOUS SOLUTION OF TETRAMETHYLAMMONIUM HYDROXIDE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2004-11-16 | — | — | US | disclosed |
| US-6777158-B2 | OCCURRENCE OF DEFECTS IN THE PATTERNED RESIST LAYER CAN BE GREATLY SUPPRESSED RESULTING IN INCREASED RELIABILITY OF THE SEMICONDUCTOR DEVICES AND PRODUCTIVITY THEREOF. | TOKYO OHKA KOGYO CO., LTD. (JP) | 2004-08-17 | — | — | US | disclosed |
| US-20040072103-A1 | Positive-working photoresist composition | SATO KAZUFUMI (JP) | 2004-04-15 | — | — | US | disclosed |
| US-20040067615-A1 | Method for the preparation of a semiconductor device | MAEMORI SATOSHI (JP) | 2004-04-08 | — | — | US | disclosed |
| US-6677103-B2 | Positive-working photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2004-01-13 | — | — | US | disclosed |
| US-6444394-B1 | Positive-working photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-09-03 | — | — | US | disclosed |
| US-20020110750-A1 | Positive-working photoresist composition | SATO KAZUFUMI (JP) | 2002-08-15 | — | — | US | disclosed |
| US-20020106580-A1 | Method for forming a hole-patterned photoresist layer | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-08-08 | — | — | US | disclosed |
| US-20020058202-A1 | Positive-working photoresist composition and photosensitive material using same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-05-16 | — | — | US | disclosed |
| US-20020045133-A1 | Method for the preparation of a semiconductor device | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-04-18 | — | — | US | disclosed |