Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PARL | Q9H300 | 2/20 | 0.68 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.55 |
| ▸ | HPGD | P15428 | 3/20 | 0.55 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.55 |
| ▸ | MMP2 | P08253 | 1/20 | 0.49 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.46 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.44 |
| ▸ | VDR | P11473 | 1/20 | 0.44 |
| ▸ | MEN1 | O00255 | 1/20 | 0.44 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.43 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.43 |
| ▸ | MAPT | P10636 | 1/20 | 0.43 |
| ▸ | GAA | P10253 | 2/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.42 |
| ▸ | CTSG | P08311 | 1/20 | 0.41 |
| ▸ | CMA1 | P23946 | 1/20 | 0.41 |
| ▸ | CA12 | O43570 | 1/20 | 0.41 |
| ▸ | CA1 | P00915 | 1/20 | 0.41 |
| ▸ | CA2 | P00918 | 1/20 | 0.41 |
| ▸ | CA3 | P07451 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12339094 | 0.90 | PARL (0.81) | PARLALDH1A1HPGDKDM4EMMP2 | |
| SCHEMBL452440 | 0.83 | PARL (0.70) | PARLALDH1A1HPGDKDM4EMMP2 | |
| SCHEMBL5557804 | 0.82 | ALDH1A1 (0.56) | PARLALDH1A1HPGDKDM4EMMP2 | |
| SCHEMBL64214 | 0.81 | PARL (0.68) | PARLALDH1A1HPGDKDM4EMMP2 | |
| SCHEMBL8490590 | 0.81 | PARL (0.68) | PARLALDH1A1HPGDKDM4EMMP2 | |
| SCHEMBL64964 | 0.81 | PARL (1.00) | PARLALDH1A1HPGDKDM4EMMP2 | |
| SCHEMBL4831944 | 0.80 | ALDH1A1 (0.54) | PARLALDH1A1HPGDKDM4EMMP2 | |
| SCHEMBL4837175 | 0.80 | ALDH1A1 (0.50) | PARLALDH1A1HPGDKDM4EMMP2 | |
| SCHEMBL7973261 | 0.79 | PARL (1.00) | PARLALDH1A1HPGDKDM4EMMP2 | |
| SCHEMBL65074 | 0.79 | GAA (0.66) | PARLALDH1A1KDM4EMMP2VDR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6569596-B1 | Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-05-27 | — | — | US | claimed |
| EP-2138897-B1 | CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN | FUJITSU LTD (JP) | 2016-08-03 | — | — | EP | disclosed |
| US-8795951-B2 | Material for forming resist sensitization film and production method of semiconductor device | FUJITSU LIMITED (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8557144-B2 | Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head | FUJITSU LIMITED (JP) | 2013-10-15 | — | — | US | disclosed |
| US-20110198730-A1 | HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD | LION CORPORATION | 2011-08-18 | — | — | US | disclosed |
| US-20110101503-A1 | HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD | LION CORPORATION (JP) | 2011-05-05 | — | — | US | disclosed |
| US-20110081615-A1 | MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-04-07 | — | — | US | disclosed |
| US-7759045-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-07-20 | — | — | US | disclosed |
| US-20100009296-A1 | MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2138897-A1 | MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | Fujitsu Limited (JP) | 2009-12-30 | — | — | EP | disclosed |
| CN-101334588-A | Chemically amplified positive resist composition | SUMITOMO CHEMICAL CO (JP) | 2008-12-31 | — | — | CN | disclosed |
| US-20080160449-A1 | Photoresist polymer having nano-smoothness and etching resistance, and resist composition | LION CORPORATION (JP) | 2008-07-03 | — | — | US | disclosed |
| US-20070148585-A1 | Hyperbranched polymer, production method therefor and resist composition containing hyperbranched polymer | LION CORPORATION. | 2007-06-28 | — | — | US | disclosed |
| EP-1698645-A1 | HYPERBRANCHED POLYMER, PROCESS FOR PRODUCING THE SAME AND RESIST COMPOSITION CONTAINING THE HYPERBRANCHED POLYMER | Lion Corporation (JP) | 2006-09-06 | — | — | EP | disclosed |
| US-6893794-B2 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2005-05-17 | — | — | US | disclosed |
| US-20040018445-A1 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2004-01-29 | — | — | US | disclosed |
| US-6569596-B1 | Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-05-27 | — | — | US | disclosed |
| US-6068962-A | NOVOLAK RESIN AS AN ALKALI-SOLUBLE COMPONENT; QUINONEDIAZIDE; ACID GENERATOR; ANTHRACENE DERIVATIVE | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2000-05-30 | — | — | US | disclosed |
| EP-0917000-A2 | Positive resist composition and method for forming a resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 1999-05-19 | — | — | EP | disclosed |
| EP-0831371-A2 | Positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 1998-03-25 | — | — | EP | disclosed |