SCHEMBL1618458

SCHEMBL1618458

C=CN1C(=O)C1CC(CC)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1618688 0.90
SCHEMBL868123 0.80
SCHEMBL632195 0.74
SCHEMBL2367586 0.73
SCHEMBL35761 0.71 ALDH1A1 (0.36)
SCHEMBL2368023 0.69 SORT1 (0.33)
Methyl Alcohol SCHEMBL5460389 0.68 ELANE (0.37)
SCHEMBL1618109 0.68 CYP1A2 (0.39)
SCHEMBL2367994 0.67
SCHEMBL35383 0.64 MMP9 (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101657511-B Composition for coating over a photoresist pattern comprising a lactam AZ ELECTRONIC MATERIALS USA 2015-02-04 CN disclosed
EP-2158277-B1 AQUEOUS COMPOSITION COMPRISING LACTAM FOR COATING OVER A PHOTORESIST PATTERN AZ ELECTRONIC MATERIALS USA (US) 2014-03-05 EP disclosed
US-8288496-B2 Contact lens and its manufacturing method NIPPON CONTACT LENS INC. (JP) 2012-10-16 US disclosed
US-20120219919-A1 Composition for Coating over a Photoresist Pattern Comprising a Lactam THIYAGARAJAN MUTHIAH (US) 2012-08-30 US disclosed
CN-102272675-A A photoresist image-forming process using double patterning 2011-12-07 CN disclosed
EP-2389612-A1 A PHOTORESIST IMAGE-FORMING PROCESS USING DOUBLE PATTERNING AZ Electronic Materials USA Corp. (US) 2011-11-30 EP disclosed
US-20110237701-A1 CONTACT LENS AND ITS MANUFACTURING METHOD NIPPON CONTACT LENS INC. (JP) 2011-09-29 US disclosed
EP-2369370-A2 Contact lens and its manufacturing method Nippon Contact Lens Inc. (JP) 2011-09-28 EP disclosed
US-7923200-B2 Polyvinylcaprolactam based; for production of microelectronics AZ ELECTRONIC MATERIALS USA CORP. (US) 2011-04-12 US disclosed
WO-2010084372-A1 A PHOTORESIST IMAGE-FORMING PROCESS USING DOUBLE PATTERNING AZ ELECTRONIC MATERIALS USA CORP. (US) 2010-07-29 WO disclosed
US-20100183851-A1 Photoresist Image-forming Process Using Double Patterning CAO YI 2010-07-22 US disclosed
EP-2158277-A2 A COMPOSITION FOR COATING OVER A PHOTORESIST PATTERN COMPRISING A LACTEM AZ Electronic Materials USA Corp. (US) 2010-03-03 EP disclosed
CN-101657511-A The composition that contains lactan that is used on the photo-resist pattern, applying AZ ELECTRONIC MATERIALS USA US 2010-02-24 CN disclosed
WO-2008122884-A2 A COMPOSITION FOR COATING OVER A PHOTORESIST PATTERN COMPRISING A LACTEM AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-10-16 WO disclosed
US-20080248427-A1 Composition for Coating over a Photoresist Pattern Comprising a Lactam MERCK PATENT GMBH (DE) 2008-10-09 US disclosed