SCHEMBL1624906

SCHEMBL1624906

C=CCc1c(Oc2cc(Br)c(Br)c(Br)c2CC=C)cc(Br)c(Br)c1Br

nearest known ligand 0.48

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 1/20 0.48
AKR1B1 P15121 5/20 0.44
ALOX15 P16050 1/20 0.36
MAPT P10636 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
POLB P06746 2/20 0.33
ALDH1A1 P00352 1/20 0.31
PPARG P37231 1/20 0.31
PPARD Q03181 1/20 0.31
PPARA Q07869 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28294117 0.74 XDH (0.38) AKR1B1ALOX15MAPTNPSR1POLB
SCHEMBL6317714 0.69 CA2 (0.32) POLB
SCHEMBL11276170 0.67 GAA (0.35) ALDH1A1
SCHEMBL1624908 0.67 TDP1 (0.45) TDP1ALOX15POLBALDH1A1PPARG
SCHEMBL943471 0.67 TDP1 (1.00) TDP1AKR1B1ALOX15MAPTNPSR1
SCHEMBL29389799 0.67 TDP1 (1.00) TDP1AKR1B1ALOX15MAPTNPSR1
SCHEMBL11575822 0.66 XDH (0.31) AKR1B1MAPTNPSR1POLBALDH1A1
SCHEMBL7077104 0.66 XDH (0.40) AKR1B1ALOX15MAPTNPSR1POLB
SCHEMBL7489147 0.65 POLB (0.33) POLBALDH1A1PPARGPPARDPPARA
SCHEMBL728363 0.61 ALDH1A1 (0.37) POLBALDH1A1PPARGPPARDPPARA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107544208-B Negative photosensitive resin composition, spacer, protective film and liquid crystal display element 奇美实业股份有限公司 2022-05-31 CN disclosed
CN-108700835-B Resist pattern forming method and resist 日本瑞翁株式会社 2022-05-27 CN disclosed
CN-104238270-B Composition, method for forming pattern, crystal grain and method for manufacturing display device 奇美实业股份有限公司 2018-11-09 CN disclosed
CN-104345557-B Negative photosensitive resin composition, pattern, crystal grain and device manufacturing method 奇美实业股份有限公司 2018-06-22 CN disclosed
CN-107544208-A Negative photosensitive resin composition, spacer, protective film and liquid crystal display element 奇美实业股份有限公司 2018-01-05 CN disclosed
CN-107544210-A Negative photosensitive resin composition, method for producing spacer, method for producing protective film, and liquid crystal display element 奇美实业股份有限公司 2018-01-05 CN disclosed
US-20180004086-A1 NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD OF SPACER, PRODUCTION METHOD OF PROTECTION FILM, AND LIQUID CRYSTAL DISPLAY DEVICE CHI MEI CORPORATION (TW) 2018-01-04 US disclosed
US-9366959-B2 Negative photosensitive resin composition and application thereof CHI MEI CORPORATION (TW) 2016-06-14 US disclosed
US-20150044790-A1 NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION AND APPLICATION THEREOF CHI MEI CORPORATION (TW) 2015-02-12 US disclosed
CN-104345557-A Negative photosensitive resin composition, pattern, crystal grain and device manufacturing method CHI MEI CORP 2015-02-11 CN disclosed
US-20110294243-A1 PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME SAMSUNG DISPLAY CO., LTD. (KR) 2011-12-01 US disclosed
US-7989136-B2 Photoresist composition and method of forming a photoresist pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-08-02 US disclosed
US-20110171581-A1 PHOTORESIST COMPOSTION AND METHOD OF MANUFACTURING ARRAY SUBSTRATE USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-07-14 US disclosed
US-7927897-B2 Photoresist composition and method of manufacturing array substrate using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-04-19 US disclosed
US-7638253-B2 Photoresist composition and method of manufacturing a thin-film transistor substrate using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-12-29 US disclosed
US-20090215233-A1 PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING ARRAY SUBSTRATE USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-08-27 US disclosed
US-20090042127-A1 PHOTORESIST COMPOSITION AND METHOD OF FORMING A PHOTORESIST PATTERN USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-02-12 US disclosed
US-20080254634-A1 Photoresist composition and method of manufacturing a thin-film transistor substrate using the same SAMSUNG ELECTRONICS CO., LTD. 2008-10-16 US disclosed
US-4950826-A Process for adjusting the cis-trans-double bond configuration in polyalkenamers HUELS AKTIENGESELLSCHAFT (DE) 1990-08-21 US disclosed
US-4048262-A CYCLODODECENE, CYCLODODECADIENE, VULCANIZATION CHEMISCHE WERKE HULS AKTIENGESELLSCHAFT (DT) 1977-09-13 US disclosed