SCHEMBL1720709

SCHEMBL1720709

OCN(CO)CCCN(CO)CO

nearest known ligand 0.30

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
EYA2 O00167 1/20 0.30
APP P05067 1/20 0.30
ACE P12821 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1720051 0.92 EYA2 (0.30) EYA2APPACETDP1
SCHEMBL11880156 0.88 ALDH1A1 (0.33)
SCHEMBL5615327 0.85
SCHEMBL1719574 0.82 TDP1 (0.41) EYA2APPACETDP1
SCHEMBL12004296 0.82 MAPT (0.39)
SCHEMBL976730 0.79
SCHEMBL1720701 0.79
SCHEMBL24359392 0.78 TDP1 (0.39) EYA2APPACETDP1
SCHEMBL5050681 0.77 TSHR (0.39)
SCHEMBL1720368 0.77 CHRM2 (0.43)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1031884-B1 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL CO (JP) 2012-01-11 EP claimed
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US claimed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US claimed
US-6638694-B2 Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) 2003-10-28 US claimed
US-20030186175-A1 RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME IKEMOTO KAZUTO (JP) 2003-10-02 US claimed
EP-1031884-A2 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2000-08-30 EP claimed
WO-2022201909-A1 RESIN COMPOSITION, HOT-MELT MOLDED ARTICLE, AND MOLDING METHOD コニカミノルタ株式会社 2022-09-29 WO disclosed
US-8163095-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-04-24 US disclosed
EP-1031884-B1 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL CO (JP) 2012-01-11 EP disclosed
US-20110206829-A1 COMPOSITION FOR STRIPPING AND STRIPPING METHOD SAMSUNG DISPLAY CO., LTD. (KR) 2011-08-25 US disclosed
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US disclosed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US disclosed
US-6638694-B2 Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) 2003-10-28 US disclosed
US-20030186175-A1 RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME IKEMOTO KAZUTO (JP) 2003-10-02 US disclosed
EP-1031884-A2 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2000-08-30 EP disclosed