SCHEMBL17736508

SCHEMBL17736508

CC(C)c1cc(C(C)C)c(S(=O)(=O)O/N=C(\C(=O)C(F)(F)F)c2nc3ccccc3s2)c(C(C)C)c1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ TSHR P16473 2/20 0.43
▸ ALOX15 P16050 1/20 0.43
▸ CASP1 P29466 1/20 0.43
▸ ALDH1A1 P00352 5/20 0.38
▸ SOAT1 P35610 1/20 0.37
▸ L3MBTL1 Q9Y468 2/20 0.36
▸ LMNA P02545 1/20 0.36
▸ ENPP3 O14638 1/20 0.36
▸ ENPP1 P22413 1/20 0.36
▸ FABP3 P05413 1/20 0.35
▸ FABP4 P15090 1/20 0.35
▸ FABP5 Q01469 1/20 0.35
▸ CYP2C9 P11712 1/20 0.35
▸ MAPT P10636 4/20 0.34
▸ HSD17B1 P14061 1/20 0.34
▸ HSD17B2 P37059 1/20 0.34
▸ TP53 P04637 1/20 0.34
▸ GAA P10253 1/20 0.34
▸ MEN1 O00255 4/20 0.33
▸ KMT2A Q03164 4/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17736488 0.92 TSHR (0.44) TSHRALOX15CASP1ALDH1A1SOAT1
SCHEMBL17736499 0.85 XIAP (0.38) ENPP3ENPP1FABP3FABP4FABP5
SCHEMBL17736509 0.81 XDH (0.37) SOAT1ENPP3ENPP1
SCHEMBL16745521 0.79 MAPT (0.43) TSHRALOX15CASP1ALDH1A1L3MBTL1
SCHEMBL17736486 0.78 ENPP3 (0.38) TSHRALOX15CASP1ALDH1A1ENPP3
SCHEMBL17736516 0.73 NPY5R (0.32) ENPP3ENPP1
SCHEMBL17736507 0.73 ALDH1A1 (0.47) TSHRALOX15CASP1ALDH1A1L3MBTL1
SCHEMBL17736497 0.72 XDH (0.37) SOAT1ENPP3ENPP1RAB9ANPC1
SCHEMBL18212184 0.72 ALDH1A1 (0.46) TSHRALOX15CASP1ALDH1A1L3MBTL1
SCHEMBL16381778 0.69 MAPT (0.44) TSHRALOX15CASP1ALDH1A1L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
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