SCHEMBL17736499

SCHEMBL17736499

CC(C)c1cc(C(C)C)c(S(=O)(=O)O/N=C(\C(=O)C(F)(F)F)c2nc3c(ccc4ccccc43)s2)c(C(C)C)c1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ XIAP P98170 1/20 0.38
▸ ENPP3 O14638 1/20 0.38
▸ ENPP1 P22413 1/20 0.38
▸ FABP3 P05413 1/20 0.32
▸ FABP4 P15090 1/20 0.32
▸ FABP5 Q01469 1/20 0.32
▸ TDP1 Q9NUW8 1/20 0.32
▸ PSEN1 P49768 1/20 0.31
▸ PSEN2 P49810 1/20 0.31
▸ APH1B Q8WW43 1/20 0.31
▸ NCSTN Q92542 1/20 0.31
▸ APH1A Q96BI3 1/20 0.31
▸ PSENEN Q9NZ42 1/20 0.31
▸ PIK3CD O00329 1/20 0.31
▸ PIK3CA P42336 1/20 0.31
▸ PIK3CB P42338 1/20 0.31
▸ PIK3CG P48736 1/20 0.31
▸ NPY5R Q15761 1/20 0.31
▸ MEN1 O00255 1/20 0.31
▸ POLB P06746 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17736508 0.85 TSHR (0.43) ENPP3ENPP1FABP3FABP4FABP5
SCHEMBL17736486 0.80 ENPP3 (0.38) ENPP3ENPP1FABP3FABP4FABP5
SCHEMBL17736488 0.77 TSHR (0.44) ENPP3ENPP1FABP3FABP4FABP5
SCHEMBL17736509 0.74 XDH (0.37) ENPP3ENPP1PIK3CDPIK3CAPIK3CB
SCHEMBL17736516 0.73 NPY5R (0.32) ENPP3ENPP1NPY5R
SCHEMBL16745517 0.73 XIAP (0.39) XIAPTDP1MEN1POLBKMT2A
SCHEMBL16745524 0.72 MAPT (0.42) XIAPTDP1MEN1POLBKMT2A
SCHEMBL17736487 0.72 ENPP3 (0.38) ENPP3ENPP1FABP3FABP4FABP5
SCHEMBL17736501 0.66 ENPP3 (0.39) ENPP3ENPP1FABP3FABP4FABP5
SCHEMBL17736497 0.66 XDH (0.37) ENPP3ENPP1PIK3CDPIK3CAPIK3CB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
Send feedback