SCHEMBL17736486

SCHEMBL17736486

CC(C)c1cc(C(C)C)c(S(=O)(=O)O/N=C(\C(=O)C(C)(C)C)c2nc3ccc4ccccc4c3s2)c(C(C)C)c1

nearest known ligand 0.38

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
▸ ENPP3 O14638 1/20 0.38
▸ ENPP1 P22413 1/20 0.38
▸ PSEN1 P49768 1/20 0.31
▸ PSEN2 P49810 1/20 0.31
▸ APH1B Q8WW43 1/20 0.31
▸ NCSTN Q92542 1/20 0.31
▸ APH1A Q96BI3 1/20 0.31
▸ PSENEN Q9NZ42 1/20 0.31
▸ ALDH1A1 P00352 1/20 0.30
▸ MAPT P10636 1/20 0.30
▸ HPGD P15428 1/20 0.30
▸ FABP3 P05413 1/20 0.30
▸ FABP4 P15090 1/20 0.30
▸ FABP5 Q01469 1/20 0.30
▸ ALOX15 P16050 1/20 0.30
▸ TSHR P16473 1/20 0.30
▸ CASP1 P29466 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17736488 0.86 TSHR (0.44) ENPP3ENPP1ALDH1A1MAPTHPGD
SCHEMBL17736487 0.82 ENPP3 (0.38) ENPP3ENPP1PSEN1PSEN2APH1B
SCHEMBL16381777 0.81 MAPT (0.35) ALDH1A1MAPTHPGD
SCHEMBL17736499 0.80 XIAP (0.38) ENPP3ENPP1PSEN1PSEN2APH1B
SCHEMBL17736508 0.78 TSHR (0.43) ENPP3ENPP1ALDH1A1MAPTHPGD
SCHEMBL17736501 0.75 ENPP3 (0.39) ENPP3ENPP1PSEN1PSEN2APH1B
SCHEMBL17736497 0.74 XDH (0.37) ENPP3ENPP1
SCHEMBL17736516 0.73 NPY5R (0.32) ENPP3ENPP1
SCHEMBL17736511 0.72 LIPG (0.34) ENPP3ENPP1
SCHEMBL17736510 0.71 ENPP3 (0.32) ENPP3ENPP1MAPTFABP3FABP4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
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