SCHEMBL18033713

SCHEMBL18033713

CCCCC(CC)COC(=O)n1nnc2cc(C(=O)O)ccc21

nearest known ligand 0.53

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
▸ HCAR3 P49019 13/20 0.53
▸ ALDH1A1 P00352 3/20 0.47
▸ CYP3A4 P08684 2/20 0.47
▸ TSHR P16473 1/20 0.47
▸ MAPK1 P28482 1/20 0.47
▸ LMNA P02545 1/20 0.47
▸ HSD17B10 Q99714 1/20 0.47
▸ HPGD P15428 1/20 0.46
▸ HCAR2 Q8TDS4 1/20 0.46
▸ RXRA P19793 2/20 0.44
▸ CA2 P00918 1/20 0.43
▸ PLA2G4A P47712 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18031574 0.87 ALDH1A1 (0.44) HCAR3ALDH1A1CYP3A4TSHRMAPK1
SCHEMBL18156658 0.81 ALDH1A1 (0.47) HCAR3ALDH1A1CYP3A4TSHRMAPK1
SCHEMBL18033701 0.81 ALDH1A1 (0.47) HCAR3ALDH1A1CYP3A4TSHRMAPK1
SCHEMBL16610515 0.76 HCAR3 (0.62) HCAR3HPGDHCAR2
SCHEMBL27095772 0.75 HCAR3 (0.53) HCAR3HPGDHCAR2RXRAPLA2G4A
SCHEMBL30038487 0.75 HCAR3 (0.61) HCAR3HPGDHCAR2RXRAPLA2G4A
SCHEMBL7159337 0.75 HCAR3 (0.61) HCAR3HPGDHCAR2RXRAPLA2G4A
SCHEMBL18033712 0.74 HCAR3 (0.60) HCAR3HPGDHCAR2
SCHEMBL18033708 0.73 HCAR3 (0.60) HCAR3HPGDHCAR2
SCHEMBL108086 0.72 ALDH1A1 (0.73) ALDH1A1CYP3A4TSHRMAPK1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9740098-B2 Chemically amplified negative resist composition using novel onium salt and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 — — US disclosed
US-9720323-B2 Chemically amplified positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-01 — — US disclosed
EP-3081987-A2 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2016-10-19 — — EP disclosed
US-20160299428-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-10-13 — — US disclosed
EP-3062150-A2 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2016-08-31 — — EP disclosed
US-20160246175-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-25 — — US disclosed
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