SCHEMBL18031574

SCHEMBL18031574

CCCCC(CC)COC(=O)n1nnc2cc(C)ccc21

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 5/20 0.44
▸ CYP3A4 P08684 3/20 0.44
▸ CA2 P00918 1/20 0.44
▸ TSHR P16473 3/20 0.43
▸ LMNA P02545 3/20 0.43
▸ MAPK1 P28482 3/20 0.43
▸ KCNMA1 Q12791 1/20 0.43
▸ HSD17B10 Q99714 1/20 0.43
▸ TDP1 Q9NUW8 2/20 0.40
▸ ATM Q13315 1/20 0.40
▸ PRSS1 P07477 1/20 0.40
▸ PRSS2 P07478 1/20 0.40
▸ PRSS3 P35030 1/20 0.40
▸ HCAR3 P49019 2/20 0.37
▸ MGAM O43451 2/20 0.36
▸ AMY1A P0DUB6 2/20 0.36
▸ GAA P10253 2/20 0.36
▸ SI P14410 2/20 0.36
▸ MGAM2 Q2M2H8 2/20 0.36
▸ CETP P11597 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18033713 0.87 HCAR3 (0.53) ALDH1A1CYP3A4CA2TSHRLMNA
SCHEMBL20473730 0.81 CYP3A4 (0.48) ALDH1A1CYP3A4CA2TSHRLMNA
SCHEMBL18031565 0.80 ALDH1A1 (0.44) ALDH1A1CYP3A4CA2TSHRLMNA
SCHEMBL18031569 0.72 KCNMA1 (0.53) ALDH1A1TSHRLMNAKCNMA1HCAR3
SCHEMBL6818371 0.72 KCNMA1 (0.50) ALDH1A1CYP3A4LMNAMAPK1KCNMA1
SCHEMBL729724 0.70 ALDH1A1 (0.45) ALDH1A1CYP3A4TSHRLMNAHSD17B10
P-Xylene SCHEMBL8440149 0.70 ALDH1A1 (0.60) ALDH1A1CYP3A4CA2TSHRLMNA
SCHEMBL6009118 0.70 ALDH1A1 (0.76) ALDH1A1CYP3A4CA2TSHRLMNA
SCHEMBL31666989 0.70 KCNMA1 (0.53) ALDH1A1TSHRLMNAKCNMA1HCAR3
SCHEMBL1161338 0.70 KCNMA1 (0.53) ALDH1A1TSHRLMNAKCNMA1HCAR3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367214-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 — — US disclosed
US-9740098-B2 Chemically amplified negative resist composition using novel onium salt and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 — — US disclosed
US-9720323-B2 Chemically amplified positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-01 — — US disclosed
US-20160299428-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-10-13 — — US disclosed
US-20160246175-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-25 — — US disclosed
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