Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TP53 | P04637 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17991842 | 0.81 | — | — | |
| SCHEMBL15101486 | 0.81 | — | — | |
| SCHEMBL182151 | 0.73 | TP53 (0.36) | TP53 | |
| SCHEMBL233699 | 0.70 | TP53 (0.33) | TP53 | |
| SCHEMBL147524 | 0.70 | — | — | |
| SCHEMBL231668 | 0.70 | — | — | |
| SCHEMBL23161531 | 0.67 | TP53 (0.31) | TP53 | |
| SCHEMBL235709 | 0.67 | TP53 (0.40) | TP53 | |
| SCHEMBL2100080 | 0.67 | — | — | |
| SCHEMBL21145424 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 467 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260035783-A1 | SIN FILM EMBEDDING METHOD AND FILM FORMATION APPARATUS | TOKYO ELECTRON LTD (JP) | 2026-02-05 | — | — | US | claimed |
| US-12540387-B2 | Simultaneous selective deposition of two different materials on two different surfaces | ASM IP HOLDING B.V. (NL) | 2026-02-03 | — | — | US | claimed |
| US-20260028712-A1 | SIMULTANEOUS SELECTIVE DEPOSITION OF TWO DIFFERENT MATERIALS ON TWO DIFFERENT SURFACES | ASM IP HOLDING BV (NL) | 2026-01-29 | — | — | US | claimed |
| US-12525451-B2 | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures | ASM IP HOLDING B.V. (NL) | 2026-01-13 | — | — | US | claimed |
| US-20250313953-A1 | METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS | ASM IP HOLDING B.V. (NL) | 2025-10-09 | — | — | US | claimed |
| US-20250305131-A1 | LOW TEMPERATURE THERMAL DEPOSITION OF SILICON-CONTAINING FILMS USING LOW WATER CONTENT HYDROGEN PEROXIDE | GELEST, INC. | 2025-10-02 | — | — | US | claimed |
| US-20250297360-A1 | SUBSTRATE PROCESSING METHOD | ASM IP HOLDING B.V. (NL) | 2025-09-25 | — | — | US | claimed |
| US-12392038-B2 | Thin-film deposition method and system | ASM IP HOLDING B.V. (NL) | 2025-08-19 | — | — | US | claimed |
| US-20250253145-A1 | SUBSTRATE PROCESSING METHOD | ASM IP HOLDING B.V. (NL) | 2025-08-07 | — | — | US | claimed |
| US-12378667-B2 | Methods and systems for forming doped silicon nitride films | ASM IP HOLDING B.V. (NL) | 2025-08-05 | — | — | US | claimed |
| US-7125812-B2 | CVD method and device for forming silicon-containing insulation film | TOKYO ELECTRON LIMITED (JP) | 2006-10-24 | — | — | US | claimed |
| US-7094708-B2 | Method of CVD for forming silicon nitride film on substrate | TOKYO ELECTRON LIMITED (JP) | 2006-08-22 | — | — | US | claimed |
| US-20050255712-A1 | Method of cvd for forming silicon nitride film on substrate | TOKYO ELECTRONLIMITED (JP) | 2005-11-17 | — | — | US | claimed |
| EP-1592051-A1 | CVD METHOD FOR FORMING SILICON NITRIDE FILM ON TARGET SUBSTRATE | TOKYO ELECTRON LIMITED (JP) | 2005-11-02 | — | — | EP | claimed |
| US-6936548-B2 | Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition | L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET, L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) | 2005-08-30 | — | — | US | claimed |
| US-20050095770-A1 | Cvd method and device for forming silicon-containing insulation film | TOKYO ELECTRON LIMITED (JP) | 2005-05-05 | — | — | US | claimed |
| US-20050037627-A1 | Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition | L'AIR LIQUIDE, SOCIETE ANONYME A DIRECTORIE ET CONSEIL DE SURVEILLANCE POUR I'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) | 2005-02-17 | — | — | US | claimed |
| EP-1475828-A1 | CVD METHOD AND DEVICE FOR FORMING SILICON-CONTAINING INSULATION FILM | TOKYO ELECTRON LIMITED (JP) | 2004-11-10 | — | — | EP | claimed |
| EP-1458903-A1 | METHOD FOR DEPOSITING SILICON NITRIDE FILMS AND SILICON OXYNITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION | L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) | 2004-09-22 | — | — | EP | claimed |
| WO-2003046253-A1 | METHOD FOR DEPOSITING SILICON NITRIDE FILMS AND SILICON OXYNITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION | L'AIR LIQUIDE, SOCIETE ANONYME A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) | 2003-06-05 | — | — | WO | claimed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260028712-A1 | SIMULTANEOUS SELECTIVE DEPOSITION OF TWO DIFFERENT MATERIALS ON TWO DIFFERENT SURFACES | EPCAM, PIEZO1, NECTIN4 | TP53 3460/4885 |
| US-12540387-B2 | Simultaneous selective deposition of two different materials on two different surfaces | EPCAM, NECTIN4, CDH1 | TP53 2540/4885 |
| US-20260035783-A1 | SIN FILM EMBEDDING METHOD AND FILM FORMATION APPARATUS | ASNS, NOS3, METTL14 | TP53 2706/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.