SCHEMBL18288017

SCHEMBL18288017

COC(=O)c1ccc2cc3ccccc3cc2c1

nearest known ligand 0.59

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALOX15 P16050 1/20 0.58
HTT P42858 1/20 0.58
PTPN11 Q06124 1/20 0.58
KDM4E B2RXH2 1/20 0.56
ALDH1A1 P00352 1/20 0.56
PLAU P00749 3/20 0.56
LCK P06239 1/20 0.56
TSHR P16473 1/20 0.55
CYP19A1 P11511 1/20 0.55
CYP11B1 P15538 1/20 0.55
CYP11B2 P19099 1/20 0.55
CES2 O00748 1/20 0.53
CES1 P23141 1/20 0.53
CA1 P00915 2/20 0.53
CA2 P00918 2/20 0.53
CA12 O43570 1/20 0.53
CA7 P43166 1/20 0.53
XDH P47989 1/20 0.53
CA9 Q16790 1/20 0.53
CA14 Q9ULX7 1/20 0.53

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10900668 1.00 ALOX15 (0.58) ALOX15HTTPTPN11KDM4EALDH1A1
SCHEMBL30572104 1.00 ALOX15 (0.58) ALOX15HTTPTPN11KDM4EALDH1A1
SCHEMBL1003761 0.94 KDM4E (0.62) ALOX15HTTPTPN11KDM4EALDH1A1
SCHEMBL9979782 0.94 PTPN11 (0.64) ALOX15HTTPTPN11KDM4EALDH1A1
Hydrochloric Acid SCHEMBL15414839 0.92 KDM4E (0.60) ALOX15HTTPTPN11KDM4EALDH1A1
SCHEMBL69025 0.90 PTPN11 (0.68) ALOX15HTTPTPN11KDM4EALDH1A1
SCHEMBL29365729 0.90 PTPN11 (0.68) ALOX15HTTPTPN11KDM4EALDH1A1
Boric Acid SCHEMBL28499454 0.89 KDM4E (0.57) ALOX15HTTPTPN11KDM4EALDH1A1
SCHEMBL28514499 0.89 KDM4E (0.57) ALOX15HTTPTPN11KDM4EALDH1A1
Trifluoroacetic Acid SCHEMBL28805961 0.89 NOTUM (0.49) ALOX15HTTPTPN11KDM4EALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250346585-A1 PHARMACEUTICAL COMPOUNDS FOR THE TREATMENT OF COMPLEMENT MEDIATED DISORDERS ALEXION PHARMACEUTICALS, INC. (US) 2025-11-13 US disclosed
WO-2023183405-A2 PHARMACEUTICAL COMPOUNDS FOR THE TREATMENT OF COMPLEMENT MEDIATED DISORDERS ALEXION PHARMACEUTICALS, INC. (US) 2023-09-28 WO disclosed
EP-3109703-B1 PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, AND METHOD FOR FORMING PATTERN USING SAME TOKYO ELECTRON LTD (JP) 2020-12-30 EP disclosed
US-10025187-B2 Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting TOKYO ELECTRON LIMITED (JP) 2018-07-17 US disclosed
US-10025187-B2 Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting TOKYO ELECTRON LIMITED (JP) 2018-07-17 US disclosed
US-10018911-B2 Chemically amplified resist material and resist pattern-forming method JSR CORPORATION (JP) 2018-07-10 US disclosed
US-9971247-B2 Pattern-forming method OSAKA UNIVERSITY (JP) 2018-05-15 US disclosed
US-9971247-B2 Pattern-forming method OSAKA UNIVERSITY (JP) 2018-05-15 US disclosed
CN-107445976-A Antimicrobe compound and its preparation and application 梅琳塔治疗公司 2017-12-08 CN disclosed
CN-107266470-A Antimicrobe compound and its preparation and application 梅琳塔治疗公司 2017-10-20 CN disclosed
US-20170052450-A1 PATTERN-FORMING METHOD OSAKA UNIVERSITY (JP) 2017-02-23 US disclosed
US-20170052450-A1 PATTERN-FORMING METHOD OSAKA UNIVERSITY (JP) 2017-02-23 US disclosed
US-20170052449-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND OSAKA UNIVERSITY (JP) 2017-02-23 US disclosed
US-20170052449-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND OSAKA UNIVERSITY (JP) 2017-02-23 US disclosed
EP-3133445-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL OSAKA UNIVERSITY (JP) 2017-02-22 EP disclosed
EP-3133444-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND OSAKA UNIVERSITY (JP) 2017-02-22 EP disclosed
US-20160357103-A1 PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING TOKYO ELECTRON LIMITED (JP) 2016-12-08 US disclosed
US-20160357103-A1 PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING TOKYO ELECTRON LIMITED (JP) 2016-12-08 US disclosed
CN-1096462-C New substituted 7, 12 -dioxabenz [a] anthracene compounds, process for preparing them and pharmaceutical compositions containing them SEVILL LTD (FR) 2002-12-18 CN disclosed
CN-1182087-A New substituted 7, 12 -dioxabenz [a] anthracene compounds, process for preparing them and pharmaceutical compositions containing them ADIR (FR) 1998-05-20 CN disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10025187-B2 Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting ASIC1, ASIC3, CLTA ALOX15 850/4885HTT 4610/4885PTPN11 1187/4885
US-20250346585-A1 PHARMACEUTICAL COMPOUNDS FOR THE TREATMENT OF COMPLEMENT MEDIATED DISORDERS C5, C1S, C9 ALOX15 148/4885HTT 602/4885PTPN11 3398/4885
US-10018911-B2 Chemically amplified resist material and resist pattern-forming method SLC11A2, XRCC5, RAD54L ALOX15 2857/4885HTT 3483/4885PTPN11 4670/4885
US-20170052449-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND RER1, POLR1A, FEM1B ALOX15 1362/4885HTT 3176/4885PTPN11 2838/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.