SCHEMBL18360376

SCHEMBL18360376

O=C(O)CN(CC(=O)O)c1ccc(C(F)(F)F)cc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KEAP1 Q14145 1/20 0.46
NFE2L2 Q16236 1/20 0.46
EPHX2 P34913 1/20 0.46
CES2 O00748 1/20 0.45
CES1 P23141 1/20 0.45
L3MBTL1 Q9Y468 2/20 0.45
MAPT P10636 1/20 0.45
MLYCD O95822 1/20 0.44
SRD5A2 P31213 1/20 0.44
PTPN1 P18031 2/20 0.43
NPC1 O15118 1/20 0.43
RAB9A P51151 1/20 0.43
GSK3B P49841 1/20 0.43
SLC6A9 P48067 1/20 0.42
PSEN1 P49768 1/20 0.41
PSEN2 P49810 1/20 0.41
APH1B Q8WW43 1/20 0.41
NCSTN Q92542 1/20 0.41
APH1A Q96BI3 1/20 0.41
PSENEN Q9NZ42 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8038936 0.83 TDP1 (0.44) KEAP1NFE2L2MAPTNPC1RAB9A
SCHEMBL9780020 0.81 KEAP1 (0.43) KEAP1NFE2L2EPHX2CES2CES1
SCHEMBL20322973 0.81 SLC6A9 (0.46) KEAP1NFE2L2CES2CES1L3MBTL1
SCHEMBL18360373 0.81 L3MBTL1 (0.51) CES2L3MBTL1
SCHEMBL14463145 0.81 NR1H4 (0.49) KEAP1NFE2L2EPHX2MAPTMLYCD
SCHEMBL18360375 0.81 MLYCD (0.41) KEAP1NFE2L2MLYCDNPC1RAB9A
SCHEMBL4142849 0.78 TDP1 (0.42) KEAP1NFE2L2CES2CES1MAPT
SCHEMBL24279553 0.76 SMN1; SMN2 (0.58) KEAP1NFE2L2L3MBTL1MAPT
SCHEMBL2475473 0.76 LSS (0.48) KEAP1NFE2L2CES2CES1SRD5A2
SCHEMBL4044376 0.76 CES2 (0.44) EPHX2CES2CES1MLYCDSRD5A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230333477-A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-10-19 US disclosed
US-20180118887-A1 PRECURSOR COMPOSITION, PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PRECURSOR COMPOSITION, CURED FILM, METHOD FOR PRODUCING CURED FILM, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-20180079864-A1 POLYIMIDE PRECURSOR COMPOSITION, PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM, METHOD FOR PRODUCING CURED FILM, A SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING POLYIMIDE PRECURSOR COMPOSITION FUJIFILM CORPORATION (JP) 2018-03-22 US disclosed
EP-3162868-A1 THERMAL BASE GENERATOR, THERMOSETTING RESIN COMPOSITION, CURED FILM, CURED FILM MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE FUJIFILM Corporation (JP) 2017-05-03 EP disclosed
US-20170101521-A1 THERMAL BASE GENERATOR, THERMOSETTING RESIN COMPOSITION, CURED FILM, CURED FILM MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2017-04-13 US disclosed
WO-2017038664-A1 COMPOSITION, CURED FILM, METHOD FOR MANUFACTURING CURED FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 富士フイルム株式会社 2017-03-09 WO disclosed
WO-2017002859-A1 NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM, CURED FILM PRODUCTION METHOD AND SEMICONDUCTOR DEVICE 富士フイルム株式会社 2017-01-05 WO disclosed