SCHEMBL1849871

SCHEMBL1849871

CCC(C)(C)OC(=O)N1CCCC1CO

nearest known ligand 0.53

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
POLB P06746 2/20 0.53
L3MBTL1 Q9Y468 2/20 0.53
ATM Q13315 2/20 0.38
ALDH1A1 P00352 2/20 0.38
HSD17B10 Q99714 1/20 0.37
EPHX2 P34913 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
DPP4 P27487 2/20 0.35
FKBP1A P62942 2/20 0.35
DPP8 Q6V1X1 1/20 0.35
TSHR P16473 1/20 0.35
MEN1 O00255 1/20 0.35
KMT2A Q03164 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1849869 1.00 POLB (0.53) POLBL3MBTL1ATMALDH1A1HSD17B10
SCHEMBL1850667 1.00 POLB (0.53) POLBL3MBTL1ATMALDH1A1HSD17B10
SCHEMBL135177 0.86 L3MBTL1 (0.58) POLBL3MBTL1ATMALDH1A1HSD17B10
SCHEMBL133363 0.86 L3MBTL1 (0.58) POLBL3MBTL1ATMALDH1A1HSD17B10
SCHEMBL47049 0.86 L3MBTL1 (0.58) POLBL3MBTL1ATMALDH1A1HSD17B10
SCHEMBL24251932 0.85 DPP4 (0.39) POLBL3MBTL1ATMALDH1A1HSD17B10
SCHEMBL25960302 0.83 ATM (0.38) POLBL3MBTL1ATMALDH1A1HSD17B10
SCHEMBL15326146 0.82 PDE8B (0.40) ATMALDH1A1HSD17B10FKBP1A
SCHEMBL25960303 0.82 ATM (0.35) POLBL3MBTL1ATMALDH1A1HSD17B10
Methylene Chloride SCHEMBL28081516 0.82 POLB (0.53) POLBL3MBTL1ATMALDH1A1HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2022064863-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR株式会社 2022-03-31 WO disclosed
EP-2325695-B1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORP (JP) 2017-12-20 EP disclosed
US-9459532-B2 Radiation-sensitive resin composition, polymer and compound JSR CORPORATION (JP) 2016-10-04 US disclosed
US-9323146-B2 Photoresist composition, resist pattern-forming method, compound, acid generating agent, and photodegradable base JSR CORPORATION (JP) 2016-04-26 US disclosed
US-9304393-B2 Radiation-sensitive resin composition and compound JSR CORPORATION (JP) 2016-04-05 US disclosed
US-9229323-B2 Pattern-forming method JSR CORPORATION (JP) 2016-01-05 US disclosed
US-9046765-B2 Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film JSR CORPORATION (JP) 2015-06-02 US disclosed
US-20140363769-A1 PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, ACID GENERATING AGENT, AND PHOTODEGRADABLE BASE JSR CORPORATION (JP) 2014-12-11 US disclosed
US-20140255854-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-09-11 US disclosed
US-8697335-B2 Radiation-sensitive resin composition and compound JSR CORPORATION (JP) 2014-04-15 US disclosed
US-20130288179-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2013-10-31 US disclosed
US-20130216951-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND JSR CORPORATION (JP) 2013-08-22 US disclosed
EP-2623558-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND JSR Corporation (JP) 2013-08-07 EP disclosed
US-8431324-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2013-04-30 US disclosed
US-20120148952-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2012-06-14 US disclosed
US-8182977-B2 Polymer and positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2012-05-22 US disclosed
US-20110223537-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER JSR CORPORATION (JP) 2011-09-15 US disclosed
EP-2325695-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2011-05-25 EP disclosed
US-20100285405-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-11-11 US disclosed
US-20100239981-A1 POLYMER AND POSITIVE-TONE RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-09-23 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120148952-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND RAD1, RER1, RPA1 POLB 1979/4885L3MBTL1 1656/4885ATM 1085/4885
US-20140363769-A1 PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, ACID GENERATING AGENT, AND PHOTODEGRADABLE BASE FRG1, FGFR1, IGF1R POLB 304/4885L3MBTL1 735/4885ATM 2329/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.