SCHEMBL1854491

SCHEMBL1854491

CCC(C)(C)OC(=O)N(C)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 3/20 0.39
ALDH1A1 P00352 2/20 0.39
LMNA P02545 4/20 0.39
KMT2A Q03164 4/20 0.39
MEN1 O00255 3/20 0.39
TSHR P16473 2/20 0.39
GRIN2D O15399 1/20 0.38
GRIN3B O60391 1/20 0.38
GRIN1 Q05586 1/20 0.38
GRIN2A Q12879 1/20 0.38
GRIN2B Q13224 1/20 0.38
GRIN2C Q14957 1/20 0.38
GRIN3A Q8TCU5 1/20 0.38
HSD11B1 P28845 1/20 0.38
USP2 O75604 1/20 0.37
TP53 P04637 1/20 0.37
ALOX15 P16050 1/20 0.37
MAPK1 P28482 1/20 0.37
NPSR1 Q6W5P4 1/20 0.37
HSD17B10 Q99714 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1853052 0.87 EPHX2 (0.37) SMN1; SMN2ALDH1A1KMT2AMEN1GRIN2D
SCHEMBL140072 0.83 MAPK1 (0.44) SMN1; SMN2ALDH1A1LMNAKMT2AMEN1
Adamantane SCHEMBL1849974 0.80 HSD11B1 (0.32) ALDH1A1HSD11B1EPHX2
SCHEMBL19088475 0.76
SCHEMBL17586285 0.75 MAPK1 (0.36) SMN1; SMN2ALDH1A1LMNAKMT2AMEN1
SCHEMBL13705971 0.75 CYP17A1 (0.50) ALDH1A1LMNAKMT2AMEN1TSHR
SCHEMBL1849971 0.74 EPHX2 (0.33) ALDH1A1KMT2AMEN1HSD11B1MAPK1
SCHEMBL533823 0.73 EPHX2 (0.44) SMN1; SMN2ALDH1A1LMNAKMT2AMEN1
SCHEMBL26029277 0.72 FABP4 (0.32)
SCHEMBL15153031 0.71 SMN1; SMN2 (0.44) SMN1; SMN2ALDH1A1KMT2AMEN1GRIN2D

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2325695-B1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORP (JP) 2017-12-20 EP disclosed
US-9465291-B2 Radiation-sensitive resin composition, polymer, compound, and method for producing compound JSR CORPORATION (JP) 2016-10-11 US disclosed
US-9459532-B2 Radiation-sensitive resin composition, polymer and compound JSR CORPORATION (JP) 2016-10-04 US disclosed
US-9323146-B2 Photoresist composition, resist pattern-forming method, compound, acid generating agent, and photodegradable base JSR CORPORATION (JP) 2016-04-26 US disclosed
US-9304393-B2 Radiation-sensitive resin composition and compound JSR CORPORATION (JP) 2016-04-05 US disclosed
US-9229323-B2 Pattern-forming method JSR CORPORATION (JP) 2016-01-05 US disclosed
US-9120288-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for preparing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2015-09-01 US disclosed
US-9120288-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for preparing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2015-09-01 US disclosed
US-9046765-B2 Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film JSR CORPORATION (JP) 2015-06-02 US disclosed
US-20140363769-A1 PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, ACID GENERATING AGENT, AND PHOTODEGRADABLE BASE JSR CORPORATION (JP) 2014-12-11 US disclosed
EP-2623558-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND JSR Corporation (JP) 2013-08-07 EP disclosed
US-8431324-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2013-04-30 US disclosed
US-20130078432-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20130078432-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20120148952-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2012-06-14 US disclosed
US-8182977-B2 Polymer and positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2012-05-22 US disclosed
US-20110223537-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER JSR CORPORATION (JP) 2011-09-15 US disclosed
EP-2325695-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2011-05-25 EP disclosed
US-20100285405-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-11-11 US disclosed
US-20100239981-A1 POLYMER AND POSITIVE-TONE RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-09-23 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120148952-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND RAD1, RER1, RPA1 SMN1; SMN2 1552/4885ALDH1A1 806/4885LMNA 2536/4885
US-20140363769-A1 PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, ACID GENERATING AGENT, AND PHOTODEGRADABLE BASE FRG1, FGFR1, IGF1R SMN1; SMN2 3001/4885ALDH1A1 435/4885LMNA 1844/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.