Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 7/20 | 0.44 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.44 |
| ▸ | CES2 | O00748 | 1/20 | 0.41 |
| ▸ | CES1 | P23141 | 1/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.40 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.38 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.38 |
| ▸ | HPGD | P15428 | 2/20 | 0.38 |
| ▸ | CYP2D6 | P10635 | 2/20 | 0.38 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.38 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.38 |
| ▸ | CHRM2 | P08172 | 2/20 | 0.37 |
| ▸ | CHRM1 | P11229 | 2/20 | 0.37 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.37 |
| ▸ | CHRM5 | P08912 | 1/20 | 0.37 |
| ▸ | CHRM3 | P20309 | 1/20 | 0.37 |
| ▸ | BLM | P54132 | 1/20 | 0.37 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.37 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18287896 | 1.00 | LMNA (0.44) | LMNAMAPK1CES2CES1KMT2A | |
| SCHEMBL18639680 | 0.80 | KMT2A (0.36) | LMNAKMT2AALDH1A1HPGDEPHX1 | |
| SCHEMBL18840678 | 0.74 | LMNA (0.41) | LMNAMAPK1CES2CES1KMT2A | |
| SCHEMBL18844225 | 0.74 | LMNA (0.41) | LMNAMAPK1CES2CES1KMT2A | |
| SCHEMBL18546029 | 0.74 | ALDH1A1 (0.43) | LMNAMAPK1CES2CES1KMT2A | |
| SCHEMBL11259126 | 0.73 | LMNA (0.46) | LMNACES2CES1KMT2AALDH1A1 | |
| SCHEMBL18536036 | 0.70 | LMNA (0.46) | LMNAMAPK1CES2CES1NR1I2 | |
| SCHEMBL10160864 | 0.67 | ALDH1A1 (0.41) | KMT2AALDH1A1HSD17B10EPHX1 | |
| SCHEMBL18537100 | 0.67 | LMNA (0.47) | LMNAMAPK1CES2CES1KMT2A | |
| SCHEMBL19707707 | 0.66 | LMNA (0.56) | LMNAMAPK1CES2CES1ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | TOKYO ELECTRON LIMITED (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | TOKYO ELECTRON LIMITED (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-9971247-B2 | Pattern-forming method | OSAKA UNIVERSITY (JP) | 2018-05-15 | — | — | US | disclosed |
| US-9971247-B2 | Pattern-forming method | OSAKA UNIVERSITY (JP) | 2018-05-15 | — | — | US | disclosed |
| US-20170131633-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170131633-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170075221-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-03-16 | — | — | US | disclosed |
| US-20170075221-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-03-16 | — | — | US | disclosed |
| US-20170052449-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052450-A1 | PATTERN-FORMING METHOD | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052448-A1 | RESIST-PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RESIST MATERIAL | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052449-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052450-A1 | PATTERN-FORMING METHOD | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052448-A1 | RESIST-PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RESIST MATERIAL | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| EP-3133445-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL | OSAKA UNIVERSITY (JP) | 2017-02-22 | — | — | EP | disclosed |
| EP-3133444-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | OSAKA UNIVERSITY (JP) | 2017-02-22 | — | — | EP | disclosed |
| US-20160357103-A1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING | TOKYO ELECTRON LIMITED (JP) | 2016-12-08 | — | — | US | disclosed |
| US-20160357103-A1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING | TOKYO ELECTRON LIMITED (JP) | 2016-12-08 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | ASIC1, ASIC3, CLTA | LMNA 293/4885MAPK1 2691/4885CES2 2337/4885 |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | SLC11A2, XRCC5, RAD54L | LMNA 1379/4885MAPK1 1657/4885CES2 1069/4885 |
| US-20170052449-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | RER1, POLR1A, FEM1B | LMNA 1024/4885MAPK1 3503/4885CES2 1202/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.