SCHEMBL18600609

SCHEMBL18600609

C=CC(=O)Oc1cc2ccccc2c2ccc3c4ccccc4c4ccccc4c3c12

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ TYMS P04818 1/20 0.42
▸ GPR84 Q9NQS5 1/20 0.41
▸ CYP1A2 P05177 3/20 0.40
▸ ERBB2 P04626 1/20 0.40
▸ FYN P06241 1/20 0.40
▸ MAOA P21397 1/20 0.40
▸ ACHE P22303 1/20 0.40
▸ AHR P35869 1/20 0.40
▸ ALDH1A1 P00352 5/20 0.40
▸ HPGD P15428 4/20 0.40
▸ MAPT P10636 2/20 0.40
▸ THRB P10828 2/20 0.38
▸ THRA P10827 1/20 0.38
▸ HSD17B10 Q99714 4/20 0.37
▸ KDM4E B2RXH2 2/20 0.37
▸ MEN1 O00255 2/20 0.37
▸ KMT2A Q03164 2/20 0.37
▸ EGFR P00533 1/20 0.37
▸ TP53 P04637 1/20 0.37
▸ CYP3A4 P08684 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL819462 0.88 GPR84 (0.49) TYMSGPR84CYP1A2ALDH1A1HPGD
SCHEMBL29733229 0.82 TYMS (0.45) TYMSCYP1A2ERBB2FYNMAOA
SCHEMBL29733303 0.80 TYMS (0.48) TYMSALDH1A1HPGDMAPTTHRB
SCHEMBL29617395 0.80 TYMS (0.48) TYMSALDH1A1HPGDMAPTTHRB
SCHEMBL69482 0.80 TYMS (0.48) TYMSALDH1A1HPGDMAPTTHRB
SCHEMBL18600604 0.79 ALDH1A1 (0.43) GPR84CYP1A2ERBB2FYNMAOA
SCHEMBL12245559 0.79 KDM4E (0.52) TYMSALDH1A1HPGDMAPTTHRB
SCHEMBL15292034 0.78 ALDH1A1 (0.47) ALDH1A1HPGDMAPTTHRBHSD17B10
SCHEMBL18600610 0.78 TYMS (0.44) TYMSCYP1A2ERBB2FYNMAOA
SCHEMBL29117894 0.78 TYMS (0.51) TYMSCYP1A2ALDH1A1HPGDMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3141957-B1 RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL CO (JP) 2021-03-24 — — EP disclosed
US-10437148-B2 Resist material, resist composition and method for forming resist pattern MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-10-08 — — US disclosed
US-10310377-B2 Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-06-04 — — US disclosed
EP-3141959-B1 LITHOGRAPHIC FILM FORMATION MATERIAL, COMPOSITION FOR LITHOGRAPHIC FILM FORMATION, LITHOGRAPHIC FILM, PATTERN FORMATION METHOD, AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL CO (JP) 2019-01-30 — — EP disclosed
US-20170144954-A1 MATERIAL FOR FORMING FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-05-25 — — US disclosed
US-20170145142-A1 RESIST MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-05-25 — — US disclosed
EP-3141959-A1 LITHOGRAPHIC FILM FORMATION MATERIAL, COMPOSITION FOR LITHOGRAPHIC FILM FORMATION, LITHOGRAPHIC FILM, PATTERN FORMATION METHOD, AND PURIFICATION METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2017-03-15 — — EP disclosed
EP-3141957-A1 RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2017-03-15 — — EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170144954-A1 MATERIAL FOR FORMING FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD AND PURIFICATION METHOD FRG1, MLLT3, FEM1B TYMS 4259/4885GPR84 2268/4885CYP1A2 3665/4885
US-10310377-B2 Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method FRG1, MLLT3, FEM1B TYMS 4259/4885GPR84 2268/4885CYP1A2 3665/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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