SCHEMBL1866864

SCHEMBL1866864

C=C(C)C(=O)OC1COCC1O

nearest known ligand 0.41

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.41
KDM4E B2RXH2 1/20 0.34
NPC1 O15118 1/20 0.34
POLB P06746 1/20 0.34
MAPT P10636 1/20 0.34
PKM P14618 1/20 0.34
HTT P42858 1/20 0.34
RECQL P46063 1/20 0.34
RAB9A P51151 1/20 0.34
ATM Q13315 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
GPX4 P36969 1/20 0.32
THRB P10828 1/20 0.32
TSHR P16473 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16787498 0.88 ALDH1A1 (0.46) ALDH1A1KDM4ENPC1POLBMAPT
SCHEMBL24486022 0.88 ALDH1A1 (0.46) ALDH1A1KDM4ENPC1POLBMAPT
SCHEMBL4261488 0.88 ALDH1A1 (0.46) ALDH1A1KDM4ENPC1POLBMAPT
SCHEMBL17829495 0.84 ALDH1A1 (0.38) ALDH1A1KDM4ENPC1POLBMAPT
SCHEMBL10040871 0.83 ALDH1A1 (0.42) ALDH1A1KDM4ENPC1POLBMAPT
SCHEMBL8544746 0.80 CHRM2 (0.37) TSHR
SCHEMBL24658759 0.80
SCHEMBL8567305 0.80 CHRM2 (0.37) TSHR
SCHEMBL18646229 0.77 ALDH1A1 (0.38) ALDH1A1THRBTSHR
SCHEMBL4855700 0.76 ALDH1A1 (0.46) ALDH1A1THRBTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7939243-B2 Resin, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-10 US claimed
US-20100159389-A1 RESIN, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-06-24 US claimed
US-20090076201-A1 (METH) ACRYLOYLOXYTETRAHYDROFURANS AND PROCESS FOR PRODUCTION THEREOF MITSUBISHI CHEMICAL CORPORATION (JP) 2009-03-19 US claimed
US-20230036031-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, METHOD FOR PRODUCING PLATED FORMED PRODUCT, AND METHOD FOR PRODUCING TIN-SILVER PLATED-FORMED PRODUCT JSR CORPORATION (JP) 2023-02-02 US disclosed
US-20220057714-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED FORMED PRODUCT JSR CORPORATION (JP) 2022-02-24 US disclosed
US-20220035246-A1 METHOD FOR PRODUCING PLATED FORMED PRODUCT JSR CORPORATION (JP) 2022-02-03 US disclosed
US-20220026802-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED FORMED PRODUCT JSR CORPORATION (JP) 2022-01-27 US disclosed
US-20210325783-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR MANUFACTURING PLATED MOLDED ARTICLE, AND SEMICONDUCTOR APPARATUS JSR CORPORATION (JP) 2021-10-21 US disclosed
US-20210311391-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR MANUFACTURING PLATED FORMED BODY, AND SEMICONDUCTOR DEVICE JSR CORPORATION (JP) 2021-10-07 US disclosed
US-10457761-B2 Polymer, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-10-29 US disclosed
US-10191373-B2 Method for producing polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-01-29 US disclosed
US-20100159389-A1 RESIN, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-06-24 US disclosed
US-20100159389-A1 RESIN, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-06-24 US disclosed
US-20100047724-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-02-25 US disclosed
US-20100047724-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-02-25 US disclosed
US-20100047724-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-02-25 US disclosed
US-20090076201-A1 (METH) ACRYLOYLOXYTETRAHYDROFURANS AND PROCESS FOR PRODUCTION THEREOF MITSUBISHI CHEMICAL CORPORATION (JP) 2009-03-19 US disclosed
US-20090076201-A1 (METH) ACRYLOYLOXYTETRAHYDROFURANS AND PROCESS FOR PRODUCTION THEREOF MITSUBISHI CHEMICAL CORPORATION (JP) 2009-03-19 US disclosed
US-20090076201-A1 (METH) ACRYLOYLOXYTETRAHYDROFURANS AND PROCESS FOR PRODUCTION THEREOF MITSUBISHI CHEMICAL CORPORATION (JP) 2009-03-19 US disclosed
JP-2006321767-A 3-(METH)ACRYLOYLOXY-4-HYDROXYTETRAHYDROFURAN AND METHOD FOR PRODUCING THE SAME MITSUBISHI CHEMICALS CORP 2006-11-30 JP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090076201-A1 (METH) ACRYLOYLOXYTETRAHYDROFURANS AND PROCESS FOR PRODUCTION THEREOF MTHFD2, MTR, MTHFD1 ALDH1A1 41/4885KDM4E 2895/4885NPC1 4449/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.