SCHEMBL18671905

SCHEMBL18671905

CCC(C)(I)C(=O)Oc1ccc(O)c2ccccc12

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ESR1 P03372 10/20 0.42
▸ ESR2 Q92731 10/20 0.42
▸ MEN1 O00255 3/20 0.42
▸ KMT2A Q03164 3/20 0.42
▸ JAK2 O60674 1/20 0.42
▸ USP2 O75604 1/20 0.42
▸ GAA P10253 1/20 0.42
▸ MAPT P10636 1/20 0.42
▸ ALOX15 P16050 1/20 0.42
▸ SMN1; SMN2 Q16637 1/20 0.42
▸ NPSR1 Q6W5P4 1/20 0.42
▸ HSD17B10 Q99714 1/20 0.42
▸ IDO1 P14902 4/20 0.42
▸ LMNA P02545 2/20 0.39
▸ L3MBTL1 Q9Y468 1/20 0.39
▸ TSHR P16473 1/20 0.39
▸ CDC25B P30305 1/20 0.39
▸ POLB P06746 1/20 0.38
▸ CHEK1 O14757 1/20 0.37
▸ ELANE P08246 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18671983 0.91 ESR1 (0.49) ESR1ESR2MEN1KMT2AJAK2
SCHEMBL8737835 0.85 ESR1 (0.44) ESR1ESR2MEN1KMT2AJAK2
SCHEMBL18785662 0.82 ELANE (0.53) ESR1ESR2MEN1KMT2AJAK2
SCHEMBL18898015 0.81 ESR1 (0.38) ESR1ESR2MEN1KMT2AJAK2
SCHEMBL18671924 0.81 ALDH1A1 (0.51) MEN1KMT2AGAAHSD17B10L3MBTL1
SCHEMBL18671830 0.81 IDO1 (0.35) GAAMAPTNPSR1IDO1L3MBTL1
SCHEMBL15189296 0.81 ESR1 (0.40) ESR1ESR2MEN1KMT2AJAK2
SCHEMBL18898050 0.80 PTGS2 (0.35) MEN1KMT2AGAAMAPTSMN1; SMN2
SCHEMBL22454743 0.79 ESR1 (0.46) ESR1ESR2MEN1KMT2AJAK2
SCHEMBL18897972 0.78 IDO1 (0.40) ESR1ESR2MEN1KMT2AJAK2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9969829-B2 Polymer compound, negative resist composition, laminate, patterning process, and compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 — — US disclosed
US-RE46765-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 — — US disclosed
US-9904172-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 — — US disclosed
US-20170210836-A1 POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, LAMINATE, PATTERNING PROCESS, AND COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-27 — — US disclosed
US-9632417-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-25 — — US disclosed
US-9604921-B2 Sulfonium salt, resist composition and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-03-28 — — US disclosed
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