SCHEMBL18924237

SCHEMBL18924237

O=C(OCCC1CCC(NSC(F)(F)F)CC1)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.41

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 8/20 0.39
NPSR1 Q6W5P4 3/20 0.39
MAPT P10636 3/20 0.39
KMT2A Q03164 3/20 0.39
MEN1 O00255 2/20 0.39
PRKCA P17252 1/20 0.36
CYP17A1 P05093 2/20 0.34
CYP19A1 P11511 2/20 0.34
EPHX1 P07099 1/20 0.33
RECQL P46063 1/20 0.33
PKM P14618 1/20 0.33
ATM Q13315 1/20 0.32
LMNA P02545 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
POLB P06746 1/20 0.32
GAA P10253 1/20 0.32
TSHR P16473 1/20 0.32
MAPK1 P28482 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19719269 0.83
SCHEMBL9924188 0.81 ALDH1A1 (0.40) ALDH1A1NPSR1MAPTKMT2AMEN1
SCHEMBL9925524 0.80 ALDH1A1 (0.39) ALDH1A1NPSR1MAPTKMT2AMEN1
SCHEMBL15747090 0.77 ALDH1A1 (0.39) ALDH1A1NPSR1MAPTKMT2AMEN1
SCHEMBL18924230 0.77 ALDH1A1 (0.44) ALDH1A1NPSR1MAPTKMT2AMEN1
SCHEMBL25658053 0.76 ALDH1A1 (0.35) ALDH1A1NPSR1MAPTKMT2AMEN1
SCHEMBL14791001 0.76 PKM (0.46) ALDH1A1NPSR1MAPTKMT2AMEN1
SCHEMBL22985782 0.75 ALDH1A1 (0.32) ALDH1A1MAPTKMT2AMEN1ATM
SCHEMBL19961030 0.74 ALDH1A1 (0.43) ALDH1A1NPSR1MAPTKMT2AMEN1
SCHEMBL22333537 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11829068-B2 Resist composition, method of forming resist pattern, compound, and resin TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-28 US disclosed
US-20230314945-A1 NEGATIVE-TONE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-05 US disclosed
US-11709425-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-25 US disclosed
US-11693316-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-11693313-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-11656549-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-23 US disclosed
US-11333973-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2022-05-17 US disclosed
US-20220121117-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND RESIN TOKYO OHKA KOGYO CO., LTD. (JP) 2022-04-21 US disclosed
US-20220107565-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2022-04-07 US disclosed
US-20220011666-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND RESIN TOKYO OHKA KOGYO CO., LTD. (JP) 2022-01-13 US disclosed
US-20190285984-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2019-09-19 US disclosed
US-10414918-B2 Method of preparing polymer compound TOKYO OHKA KOGYO CO., LTD. (JP) 2019-09-17 US disclosed
US-10394122-B2 Resist composition, method for forming resist pattern, compound, and acid generator TOYKO OHKA KOGYO CO., LTD. (JP) 2019-08-27 US disclosed
US-20190196329-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2019-06-27 US disclosed
US-10261416-B2 Resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2019-04-16 US disclosed
US-20180067394-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-03-08 US disclosed
US-20180022916-A1 METHOD OF PREPARING POLYMER COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2018-01-25 US disclosed
US-9690194-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-27 US disclosed
US-9682951-B2 Resist composition, method of forming resist pattern, acid generator, photoreactive quencher, and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-20 US disclosed
US-9671690-B2 Resist composition, method for forming resist pattern, photo-reactive quencher and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-06 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709425-B2 Resist composition and method of forming resist pattern RER1, RRS1, RXFP4 ALDH1A1 3475/4885NPSR1 1311/4885MAPT 4059/4885
US-11693313-B2 Resist composition and method of forming resist pattern C1R, C1S, C9 ALDH1A1 1921/4885NPSR1 1322/4885MAPT 3206/4885
US-10394122-B2 Resist composition, method for forming resist pattern, compound, and acid generator RB1, FXR1, CCNA1 ALDH1A1 1415/4885NPSR1 3096/4885MAPT 3580/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.