Predicted protein targets (top 17)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 8/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.39 |
| ▸ | NPSR1 | Q6W5P4 | 3/20 | 0.39 |
| ▸ | MAPT | P10636 | 2/20 | 0.39 |
| ▸ | MEN1 | O00255 | 2/20 | 0.39 |
| ▸ | PRKCA | P17252 | 1/20 | 0.35 |
| ▸ | RECQL | P46063 | 1/20 | 0.34 |
| ▸ | CYP17A1 | P05093 | 1/20 | 0.34 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.34 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
| ▸ | POLB | P06746 | 1/20 | 0.33 |
| ▸ | GAA | P10253 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.33 |
| ▸ | PKM | P14618 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15747090 | 0.86 | ALDH1A1 (0.39) | ALDH1A1KMT2ANPSR1MAPTMEN1 | |
| SCHEMBL9924188 | 0.81 | ALDH1A1 (0.40) | ALDH1A1KMT2ANPSR1MAPTMEN1 | |
| SCHEMBL17750739 | 0.80 | PGR (0.36) | ALDH1A1KMT2ANPSR1MAPTMEN1 | |
| SCHEMBL18924237 | 0.80 | ALDH1A1 (0.39) | ALDH1A1KMT2ANPSR1MAPTMEN1 | |
| SCHEMBL9893796 | 0.77 | ALDH1A1 (0.43) | ALDH1A1KMT2ANPSR1MAPTMEN1 | |
| SCHEMBL9924177 | 0.75 | ALDH1A1 (0.42) | ALDH1A1KMT2ANPSR1MAPTMEN1 | |
| SCHEMBL14791001 | 0.75 | PKM (0.46) | ALDH1A1KMT2ANPSR1MAPTMEN1 | |
| SCHEMBL19796149 | 0.74 | ALDH1A1 (0.46) | ALDH1A1KMT2ANPSR1MAPTMEN1 | |
| SCHEMBL9925523 | 0.73 | EPHX1 (0.42) | ALDH1A1KMT2ANPSR1MAPTMEN1 | |
| SCHEMBL9946445 | 0.73 | EPHX1 (0.42) | ALDH1A1KMT2ANPSR1MAPTMEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 79 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9846364-B2 | Method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-12-19 | — | — | US | disclosed |
| US-20170343897-A1 | CHEMICAL FOR PHOTOLITHOGRAPHY WITH IMPROVED LIQUID TRANSFER PROPERTY AND RESIST COMPOSITION COMPRISING THE SAME | TOKYO OHKA KOGYO CO LTD (JP) | 2017-11-30 | — | — | US | disclosed |
| US-9778567-B2 | Resist composition, method of forming resist pattern, polymeric compound, compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-10-03 | — | — | US | disclosed |
| US-9766541-B2 | Positive-type resist composition, method for forming resist pattern, photo-reactive quencher, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9740105-B2 | Resist pattern formation method and resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9696625-B2 | Method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-07-04 | — | — | US | disclosed |
| US-20170176855-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ACID GENERATOR AND COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-06-22 | — | — | US | disclosed |
| US-9682951-B2 | Resist composition, method of forming resist pattern, acid generator, photoreactive quencher, and compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-06-20 | — | — | US | disclosed |
| US-9678423-B2 | Resist composition, method for forming resist pattern, acid generator and compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-06-13 | — | — | US | disclosed |
| US-9671690-B2 | Resist composition, method for forming resist pattern, photo-reactive quencher and compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-06-06 | — | — | US | disclosed |
| US-20130115554-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-05-09 | — | — | US | disclosed |
| US-20130095427-A1 | RESIST COMPOSITION FOR EUV OR EB AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-04-18 | — | — | US | disclosed |
| US-20130065180-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-03-14 | — | — | US | disclosed |
| US-20130022911-A1 | POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-01-24 | — | — | US | disclosed |
| US-20120328982-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-27 | — | — | US | disclosed |
| US-20120301829-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-11-29 | — | — | US | disclosed |
| US-20120276481-A1 | METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-11-01 | — | — | US | disclosed |
| US-20120264058-A1 | RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-10-18 | — | — | US | disclosed |
| US-20120148956-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120149916-A1 | NOVEL COMPOUND | CENTRAL GLASS CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20130115554-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | C1R, SLC11A2, C9 | ALDH1A1 1040/4885KMT2A 2248/4885NPSR1 338/4885 |
| US-20120149916-A1 | NOVEL COMPOUND | MRPL11, ABCB7, MRPL21 | ALDH1A1 1340/4885KMT2A 3079/4885NPSR1 3069/4885 |
| US-20170176855-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ACID GENERATOR AND COMPOUND | RB1, FXR1, GAR1 | ALDH1A1 900/4885KMT2A 2502/4885NPSR1 3842/4885 |
| US-20120301829-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | SCO2, ASIC1, NOX1 | ALDH1A1 1048/4885KMT2A 2727/4885NPSR1 973/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.