SCHEMBL18924230

SCHEMBL18924230

O=C(OCCNSC(F)(F)F)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.47

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 10/20 0.44
NPSR1 Q6W5P4 3/20 0.44
KMT2A Q03164 3/20 0.44
MAPT P10636 2/20 0.44
MEN1 O00255 2/20 0.44
PRKCA P17252 1/20 0.40
RECQL P46063 1/20 0.39
CYP17A1 P05093 2/20 0.39
CYP19A1 P11511 2/20 0.39
TSHR P16473 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
PKM P14618 1/20 0.36
ATM Q13315 1/20 0.36
LMNA P02545 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19961030 0.92 ALDH1A1 (0.43) ALDH1A1NPSR1KMT2AMAPTMEN1
SCHEMBL18924278 0.89 ALDH1A1 (0.41) ALDH1A1NPSR1KMT2AMAPTMEN1
SCHEMBL18924238 0.89 ALDH1A1 (0.41) ALDH1A1NPSR1KMT2AMAPTMEN1
SCHEMBL25838998 0.81 NPSR1 (0.32) ALDH1A1NPSR1KMT2AMAPTMEN1
SCHEMBL9924179 0.78 ALDH1A1 (0.46) ALDH1A1NPSR1KMT2AMAPTMEN1
SCHEMBL15132955 0.78 ALDH1A1 (0.46) ALDH1A1NPSR1KMT2AMAPTMEN1
SCHEMBL18924237 0.77 ALDH1A1 (0.39) ALDH1A1NPSR1KMT2AMAPTMEN1
SCHEMBL25803800 0.77 PRKCA (0.60) ALDH1A1NPSR1KMT2AMAPTMEN1
SCHEMBL18924277 0.77 ALDH1A1 (0.34) ALDH1A1NPSR1KMT2AMAPTMEN1
SCHEMBL18949942 0.77 KDM4E (0.54) ALDH1A1KMT2AMEN1CYP17A1CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11829068-B2 Resist composition, method of forming resist pattern, compound, and resin TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-28 US disclosed
US-11780946-B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-10 US disclosed
US-20230314945-A1 NEGATIVE-TONE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-05 US disclosed
US-20230268178-A1 PROTECTIVE COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-08-24 US disclosed
US-11709425-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-25 US disclosed
US-11703757-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-11693316-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-11656549-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-23 US disclosed
US-20220206384-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2022-06-30 US disclosed
US-11333973-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2022-05-17 US disclosed
US-20210026243-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2021-01-28 US disclosed
US-20200409259-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2020-12-31 US disclosed
US-20200257197-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2020-08-13 US disclosed
US-20200159119-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2020-05-21 US disclosed
US-20200135451-A1 PROTECTIVE COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2020-04-30 US disclosed
US-10394122-B2 Resist composition, method for forming resist pattern, compound, and acid generator TOYKO OHKA KOGYO CO., LTD. (JP) 2019-08-27 US disclosed
US-9846364-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-12-19 US disclosed
US-9682951-B2 Resist composition, method of forming resist pattern, acid generator, photoreactive quencher, and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-20 US disclosed
US-9678423-B2 Resist composition, method for forming resist pattern, acid generator and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-13 US disclosed
US-9671690-B2 Resist composition, method for forming resist pattern, photo-reactive quencher and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-06 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709425-B2 Resist composition and method of forming resist pattern RER1, RRS1, RXFP4 ALDH1A1 3475/4885NPSR1 1311/4885KMT2A 2140/4885
US-10394122-B2 Resist composition, method for forming resist pattern, compound, and acid generator RB1, FXR1, CCNA1 ALDH1A1 1415/4885NPSR1 3096/4885KMT2A 2152/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.