SCHEMBL1897238

SCHEMBL1897238

C=Cc1ccccc1C(=O)OC(C)OC(C)(C)CC

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SCN1A P35498 1/20 0.36
SCN2A Q99250 1/20 0.36
SCN3A Q9NY46 1/20 0.36
ALDH1A1 P00352 5/20 0.34
TSHR P16473 4/20 0.34
CYP3A4 P08684 1/20 0.34
CYP1A2 P05177 1/20 0.34
CYP2D6 P10635 1/20 0.34
CYP2C19 P33261 1/20 0.34
ADRB2 P07550 4/20 0.33
ADRB1 P08588 4/20 0.33
ADRB3 P13945 4/20 0.33
NPC1 O15118 1/20 0.32
KMT2A Q03164 1/20 0.32
KDM4E B2RXH2 1/20 0.32
LMNA P02545 1/20 0.32
HPGD P15428 1/20 0.32
BACE1 P56817 1/20 0.31
HSD17B10 Q99714 1/20 0.31
TDP1 Q9NUW8 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1899421 0.87 NPC1 (0.35) SCN1ASCN2ASCN3AALDH1A1TSHR
SCHEMBL1897725 0.81 TSHR (0.40) SCN1ASCN2ASCN3AALDH1A1TSHR
SCHEMBL1895797 0.79 NPC1 (0.37) SCN1ASCN2ASCN3AALDH1A1TSHR
SCHEMBL1902387 0.79 ALDH1A1 (0.43) SCN1ASCN2ASCN3AALDH1A1TSHR
SCHEMBL1897090 0.79 ALDH1A1 (0.39) SCN1ASCN2ASCN3AALDH1A1TSHR
SCHEMBL1897705 0.78 NPC1 (0.39) SCN1ASCN2ASCN3AALDH1A1TSHR
SCHEMBL1896552 0.77 ALDH1A1 (0.46) SCN1ASCN2ASCN3AALDH1A1TSHR
SCHEMBL820636 0.77 NPC1 (0.50) ALDH1A1TSHRCYP3A4CYP1A2CYP2C19
SCHEMBL29030417 0.77 ALDH1A1 (0.40) SCN1ASCN2ASCN3AALDH1A1TSHR
SCHEMBL1899451 0.77 TSHR (0.46) ALDH1A1TSHRCYP3A4CYP1A2CYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed