Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 2/20 | 0.37 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.36 |
| ▸ | MEN1 | O00255 | 2/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.35 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.32 |
| ▸ | SLC5A7 | Q9GZV3 | 1/20 | 0.32 |
| ▸ | GALR3 | O60755 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL638342 | 0.97 | TSHR (0.39) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| Water SCHEMBL1358543 | 0.94 | TSHR (0.37) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| Hydrochloric Acid SCHEMBL2444153 | 0.94 | CYP3A4 (0.38) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| Bromide SCHEMBL28550756 | 0.94 | MEN1 (0.38) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| Fluoride SCHEMBL27656504 | 0.94 | TSHR (0.37) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| Water SCHEMBL11035195 | 0.91 | TSHR (0.35) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| SCHEMBL27656499 | 0.86 | ALDH1A1 (0.32) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| SCHEMBL5044768 | 0.86 | ALDH1A1 (0.32) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| SCHEMBL3750721 | 0.84 | ALDH1A1 (0.31) | TSHRMAPK1ALDH1A1GALR3 | |
| Sulfuric Acid SCHEMBL27564936 | 0.84 | ALDH1A1 (0.31) | TSHRMAPK1ALDH1A1GALR3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1959303-B1 | CLEANING SOLUTION FOR SEMICONDUCTOR DEVICE OR DISPLAY DEVICE, AND CLEANING METHOD | MITSUBISHI GAS CHEMICAL CO (JP) | 2017-08-23 | — | — | EP | disclosed |
| EP-1628336-B1 | Cleaning liquid and cleaning method | MITSUBISHI GAS CHEMICAL CO (JP) | 2012-01-04 | — | — | EP | disclosed |
| US-7998914-B2 | Cleaning solution for semiconductor device or display device, and cleaning method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2011-08-16 | — | — | US | disclosed |
| US-20100152085-A1 | CLEANING SOLUTION FOR SEMICONDUCTOR DEVICE OR DISPLAY DEVICE, AND CLEANING METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2010-06-17 | — | — | US | disclosed |
| US-7572758-B2 | aqueous solution of nitric acid, sulfuric acid, and specified amount of either ammonium fluoride or tetramethylammonium fluoride, and a base; for semicondutors or displays with metal wirings; removes etch residues without oxidizing or corroding the materials of copper wirings | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2009-08-11 | — | — | US | disclosed |
| US-20080210900-A1 | Selective Wet Etchings Of Oxides | PNC BANK, NATIONAL ASSOCIATION | 2008-09-04 | — | — | US | disclosed |
| EP-1959303-A1 | CLEANING SOLUTION FOR SEMICONDUCTOR DEVICE OR DISPLAY DEVICE, AND CLEANING METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-08-20 | — | — | EP | disclosed |
| EP-1880410-A2 | SELECTIVE WET ETCHING OF OXIDES | SACHEM, INC. (US) | 2008-01-23 | — | — | EP | disclosed |
| WO-2006124201-A2 | SELECTIVE WET ETCHING OF OXIDES | SACHEM, INC. (US) | 2006-11-23 | — | — | WO | disclosed |
| US-20060040838-A1 | Cleaning liquid and cleaning method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2006-02-23 | — | — | US | disclosed |
| EP-1628336-A2 | Cleaning liquid and cleaning method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2006-02-22 | — | — | EP | disclosed |
| US-20040224866-A1 | Cleaning solution and cleaning process using the solution | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2004-11-11 | — | — | US | disclosed |
| US-20040188385-A1 | Etching agent composition for thin films having high permittivity and process for etching | MITSUBISHI GAS CHEMICAL CO., INC. (JP) | 2004-09-30 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100152085-A1 | CLEANING SOLUTION FOR SEMICONDUCTOR DEVICE OR DISPLAY DEVICE, AND CLEANING METHOD | SMOX, SRM, SMS | TSHR 3080/4885MAPK1 475/4885ALDH1A1 510/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.