SCHEMBL19409474

SCHEMBL19409474

Cc1cc(-c2cccc(C3CCC(O)CC3C)c2)c(O)c(O)c1-c1cccc(C2CCC(O)CC2C)c1

nearest known ligand 0.34

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
▸ MAOA P21397 6/20 0.34
▸ FLT3 P36888 7/20 0.33
▸ FLT4 P35916 6/20 0.33
▸ KDR P35968 5/20 0.33
▸ MAOB P27338 3/20 0.33
▸ CNR1 P21554 1/20 0.32
▸ CNR2 P34972 1/20 0.32
▸ PDGFRA P16234 1/20 0.32
▸ FLT1 P17948 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Ethane SCHEMBL28745541 0.74 APP (0.44) MAOACNR1CNR2
SCHEMBL27640874 0.69 MAOB (0.42) MAOAMAOB
SCHEMBL28161049 0.65 CNR1 (0.38) MAOBCNR1CNR2
SCHEMBL4415372 0.64 VDR (0.41) CNR1CNR2
SCHEMBL2292650 0.63 TRPA1 (0.32) CNR1CNR2
SCHEMBL27702538 0.62 SLC5A1 (0.35) CNR1CNR2
SCHEMBL8976030 0.62 HSD17B1 (0.44) —
SCHEMBL17837970 0.59 ACLY (0.35) MAOACNR1CNR2
SCHEMBL23923588 0.59 HTR2A (0.56) —
SCHEMBL23940041 0.59 HTR2A (0.56) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10168617-B2 Composition for forming interlayer insulating film, interlayer insulating film, method for forming interlayer insulating film pattern, and device TOKYO OHKA KOGYO CO., LTD. (JP) 2019-01-01 — — US disclosed
US-10156787-B2 Composition for forming interlayer insulating film, interlayer insulating film, method for forming interlayer insulating film pattern, and device TOKYO OHKA KOGYO CO., LTD. (JP) 2018-12-18 — — US disclosed
US-20170285473-A1 COMPOSITION FOR FORMING INTERLAYER INSULATING FILM, INTERLAYER INSULATING FILM, METHOD FOR FORMING INTERLAYER INSULATING FILM PATTERN, AND DEVICE TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-05 — — US disclosed
US-20170285472-A1 COMPOSITION FOR FORMING INTERLAYER INSULATING FILM, INTERLAYER INSULATING FILM, METHOD FOR FORMING INTERLAYER INSULATING FILM PATTERN, AND DEVICE TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-05 — — US disclosed
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