Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL9560642 | 0.82 | — | — | |
| Water SCHEMBL8518046 | 0.82 | — | — | |
| Water SCHEMBL8166098 | 0.82 | — | — | |
| Water SCHEMBL2838856 | 0.82 | — | — | |
| Water SCHEMBL1331926 | 0.82 | — | — | |
| Water SCHEMBL18941383 | 0.82 | — | — | |
| Water SCHEMBL489954 | 0.82 | — | — | |
| Water SCHEMBL20582743 | 0.82 | — | — | |
| Water SCHEMBL22721249 | 0.82 | — | — | |
| SCHEMBL30960334 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 309 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12484232-B2 | Ferroelectric memory device and method of fabricating the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-25 | — | — | US | claimed |
| US-20250351466-A1 | OXIDE SEMICONDUCTOR FERROELECTRIC FIELD EFFECT TRANSISTOR | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | claimed |
| US-20250241015-A1 | OXIDE SEMICONDUCTOR FERROELECTRIC FIELD EFFECT TRANSISTOR | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-24 | — | — | US | claimed |
| US-12302590-B2 | Ferroelectric MFM capacitor array and methods of making the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2025-05-13 | — | — | US | claimed |
| CN-119967855-A | Device structure, semiconductor device and forming method thereof | 台湾积体电路制造股份有限公司 | 2025-05-09 | — | — | CN | claimed |
| US-12154938-B2 | Ferroelectric MFM capacitor array and methods of making the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2024-11-26 | — | — | US | claimed |
| CN-113206107-B | Ferroelectric memory and method for fabricating the same | 财团法人工业技术研究院 | 2024-08-23 | — | — | CN | claimed |
| US-12051750-B2 | Memory array gate structures | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-07-30 | — | — | US | claimed |
| US-12040387-B2 | Negative-capacitance field effect transistor | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-07-16 | — | — | US | claimed |
| US-11856789-B2 | Ferroeolectric memories with ferroelectric composite layer | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) | 2023-12-26 | — | — | US | claimed |
| US-20220208990-A1 | NEGATIVE-CAPACITANCE FIELD EFFECT TRANSISTOR | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-06-30 | — | — | US | claimed |
| US-11217661-B2 | Ferroelectric memories | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) | 2022-01-04 | — | — | US | claimed |
| US-20210376055-A1 | FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-12-02 | — | — | US | claimed |
| CN-113299830-A | Ferroelectric metal-ferroelectric metal capacitor formed on semiconductor die and method | 台湾积体电路制造股份有限公司 | 2021-08-24 | — | — | CN | claimed |
| US-20210242304-A1 | FERROELECTRIC MEMORIES | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) | 2021-08-05 | — | — | US | claimed |
| US-20210174855-A1 | FERROELECTRIC MEMORIES | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) | 2021-06-10 | — | — | US | claimed |
| CN-112928116-A | Ferroelectric memory | 财团法人工业技术研究院 | 2021-06-08 | — | — | CN | claimed |
| US-11017830-B1 | Ferroelectric memories | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) | 2021-05-25 | — | — | US | claimed |
| US-10833091-B2 | Ferroelectric memories | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) | 2020-11-10 | — | — | US | claimed |
| US-20200194443-A1 | FERROELECTRIC MEMORIES | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) | 2020-06-18 | — | — | US | claimed |