SCHEMBL19834693

SCHEMBL19834693

CCc1ccc(C(=O)c2ccccc2)c(I)c1CC

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PTGS1 P23219 1/20 0.43
PTGS2 P35354 1/20 0.43
AKR1C3 P42330 1/20 0.42
MAPT P10636 3/20 0.41
MAPK1 P28482 3/20 0.41
ALDH1A1 P00352 3/20 0.41
KDM4E B2RXH2 2/20 0.40
GAA P10253 2/20 0.40
KMT2A Q03164 2/20 0.40
MEN1 O00255 1/20 0.40
USP2 O75604 1/20 0.40
KEAP1 Q14145 1/20 0.40
NFE2L2 Q16236 1/20 0.40
ALOX15 P16050 1/20 0.40
HSD17B10 Q99714 1/20 0.40
HPGD P15428 2/20 0.39
LMNA P02545 1/20 0.39
CYP1A2 P05177 1/20 0.39
PGR P06401 1/20 0.39
CYP2D6 P10635 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28907697 0.84 HPGD (0.43) PTGS1PTGS2AKR1C3MAPTMAPK1
SCHEMBL30349631 0.83 PTGS2 (0.45) PTGS1PTGS2AKR1C3MAPTMAPK1
SCHEMBL743150 0.81 MAPT (0.47) PTGS1PTGS2AKR1C3MAPTALDH1A1
SCHEMBL28591061 0.80 ALDH1A1 (0.43) PTGS1PTGS2AKR1C3MAPTMAPK1
SCHEMBL19834696 0.80 AKR1C3 (0.48) PTGS1PTGS2AKR1C3MAPTALDH1A1
SCHEMBL15741161 0.80 PTGS2 (0.45) PTGS1PTGS2AKR1C3MAPTMAPK1
SCHEMBL9625731 0.80 AKR1C3 (0.52) PTGS1PTGS2AKR1C3MAPTALDH1A1
Ammonia Solution, Strong SCHEMBL8397111 0.78 AKR1C3 (0.50) PTGS1PTGS2AKR1C3MAPTALDH1A1
SCHEMBL4091414 0.77 PTGS1 (0.49) PTGS1PTGS2AKR1C3MAPTMAPK1
SCHEMBL29001944 0.77 CES2 (0.41) PTGS1PTGS2AKR1C3MAPTMAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107428646-B Compounds, resins, and methods for their purification, and uses thereof 三菱瓦斯化学株式会社 2021-03-02 CN disclosed
US-10747112-B2 Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-08-18 US disclosed
EP-3279179-B1 COMPOUND, RESIN, AND PURIFICATION METHOD THEREOF, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM , AND UNDERLAYER FILM, AS WELL AS RESIST PATTERN FORMING METHOD AND CIRCUIT PATTERN FORMING METHOD. MITSUBISHI GAS CHEMICAL CO (JP) 2019-12-18 EP disclosed
US-20180095368-A1 COMPOUND, RESIN, AND PURIFICATION METHOD THEREOF, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM, AND UNDERLAYER FILM, AS WELL AS RESIST PATTERN FORMING METHOD AND CIRCUIT PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-04-05 US disclosed
EP-3279179-A1 COMPOUND, RESIN, AND METHOD FOR PURIFYING SAME, UNDERLAYER FILM FORMATION MATERIAL FOR LITHOGRAPHY, UNDERLAYER FILM FORMING COMPOSITION, AND UNDERLAYER FILM, AND METHOD FOR FORMING RESIST PATTERN AND METHOD FOR FORMING CIRCUIT PATTERN Mitsubishi Gas Chemical Company, Inc. (JP) 2018-02-07 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180095368-A1 COMPOUND, RESIN, AND PURIFICATION METHOD THEREOF, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM, AND UNDERLAYER FILM, AS WELL AS RESIST PATTERN FORMING METHOD AND CIRCUIT PATTERN FORMING METHOD C5, PRMT9, C9 PTGS1 2944/4885PTGS2 3254/4885AKR1C3 576/4885
US-10747112-B2 Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method C5, PRMT9, C9 PTGS1 2944/4885PTGS2 3254/4885AKR1C3 576/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.