Diphenylsulfane

Diphenylsulfane

SCHEMBL1996327

CC(C)(C)c1ccccc1OS(=O)(=O)C(F)(F)F.c1ccc(Sc2ccccc2)cc1

nearest known ligand 0.38

Full drug profile on Sugi Atlas →

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.38
ATM Q13315 1/20 0.38
DRD2 P14416 4/20 0.36
DRD3 P35462 3/20 0.36
DRD1 P21728 1/20 0.36
DRD4 P21917 1/20 0.36
DRD5 P21918 1/20 0.36
ALDH1A1 P00352 4/20 0.36
KDM4E B2RXH2 2/20 0.36
GAA P10253 1/20 0.36
RXRA P19793 1/20 0.36
RXRB P28702 1/20 0.36
RXRG P48443 1/20 0.36
HSD11B1 P28845 2/20 0.35
HSD17B3 P37058 1/20 0.35
MEN1 O00255 1/20 0.34
MAPT P10636 1/20 0.34
HPGD P15428 1/20 0.34
KMT2A Q03164 1/20 0.34
NPSR1 Q6W5P4 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29414132 0.91 TDP1 (0.44) TDP1ATMDRD2DRD3DRD1
SCHEMBL1997201 0.91 TDP1 (0.44) TDP1ATMDRD2DRD3DRD1
Hydrogen Sulfide SCHEMBL4225727 0.89 TDP1 (0.43) TDP1ATMDRD2DRD3DRD1
Iodide SCHEMBL6927596 0.89 TDP1 (0.43) TDP1ATMDRD2DRD3DRD1
Tromethamine SCHEMBL5471107 0.78 RXRA (0.41) TDP1ATMDRD2DRD3DRD1
Diphenylsulfane SCHEMBL2191112 0.78 CA1 (0.50) TDP1ALDH1A1GAAHSD11B1HSD17B3
Diphenylsulfane SCHEMBL23706320 0.78 PTGS2 (0.40) DRD2DRD3DRD1DRD4DRD5
Iodide SCHEMBL8736611 0.78 DRD2 (0.38) TDP1ATMDRD2DRD3DRD1
SCHEMBL6207099 0.77 PPARG (0.43) DRD2DRD3DRD1DRD4DRD5
Diphenylsulfane SCHEMBL671233 0.77 ALDH1A1 (0.40) TDP1DRD2DRD3DRD1DRD4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7300741-B2 For printing features having a dimension of about 30 nm or less; resist is developable in an aqueous alkaline developer INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-11-27 US claimed
US-20070248908-A1 ADVANCED CHEMICALLY AMPLIFIED RESIST FOR SUB 30NM DENSE FEATURE RESOLUTION INTERNATIONAL BUSINESS MACHINES (US) 2007-10-25 US claimed
US-7960095-B2 Combination of base additives including a room temperature solid base, and a liquid low vapor pressure base; for chromium-containing layers used in mask-making INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-06-14 US disclosed
US-20080227030-A1 Use of Mixed Bases to Enhance Patterned Resist Profiles on Chrome or Sensitive Substrates INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-09-18 US disclosed
US-7300741-B2 For printing features having a dimension of about 30 nm or less; resist is developable in an aqueous alkaline developer INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-11-27 US disclosed
US-20070269736-A1 NEW SUB 40 NM RESOLUTION Si CONTAINING RESIST SYSTEM INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-11-22 US disclosed
US-20070248908-A1 ADVANCED CHEMICALLY AMPLIFIED RESIST FOR SUB 30NM DENSE FEATURE RESOLUTION INTERNATIONAL BUSINESS MACHINES (US) 2007-10-25 US disclosed
US-7090963-B2 Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-08-15 US disclosed
US-20040265747-A1 PROCESS FOR FORMING FEATURES OF 50 NM OR LESS HALF-PITCH WITH CHEMICALLY AMPLIFIED RESIST IMAGING INTERNATIONAL BUSINESS MACHINES CORPORATION 2004-12-30 US disclosed