Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FFAR1 | O14842 | 1/20 | 0.38 |
| ▸ | FFAR4 | Q5NUL3 | 1/20 | 0.38 |
| ▸ | PKM | P14618 | 1/20 | 0.35 |
| ▸ | EPAS1 | Q99814 | 2/20 | 0.33 |
| ▸ | NR3C1 | P04150 | 2/20 | 0.32 |
| ▸ | SCD | O00767 | 2/20 | 0.32 |
| ▸ | AMY1A | P0DUB6 | 2/20 | 0.31 |
| ▸ | GAA | P10253 | 1/20 | 0.31 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.30 |
| ▸ | NR3C2 | P08235 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1337233 | 0.82 | GPR3 (0.40) | FFAR1FFAR4PKMEPAS1SCD | |
| SCHEMBL21309151 | 0.80 | FFAR1 (0.38) | FFAR1FFAR4PKMEPAS1SCD | |
| SCHEMBL6764191 | 0.79 | CA3 (0.38) | KCNH2 | |
| SCHEMBL13008512 | 0.79 | HSPB1 (0.42) | EPAS1 | |
| SCHEMBL24871296 | 0.79 | MAPK1 (0.41) | GAAKCNH2 | |
| SCHEMBL6764247 | 0.78 | FFAR1 (0.39) | FFAR1FFAR4KCNH2 | |
| SCHEMBL24383667 | 0.77 | FFAR1 (0.39) | FFAR1FFAR4PKMEPAS1NR3C1 | |
| SCHEMBL1204321 | 0.77 | AMY1A (0.46) | FFAR1FFAR4AMY1A | |
| SCHEMBL29712244 | 0.77 | AMY1A (0.46) | FFAR1FFAR4AMY1A | |
| SCHEMBL21974055 | 0.76 | KCNH2 (0.30) | NR3C1KCNH2NR3C2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10725377-B2 | Chemically amplified negative resist composition and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-28 | — | — | US | disclosed |
| EP-3343292-B1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-05-06 | — | — | EP | disclosed |
| CN-107935899-B | Sulfonium compound, anti-corrosion agent composition and pattern forming method | 信越化学工业株式会社 | 2019-11-12 | — | — | CN | disclosed |
| EP-3343291-B1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2019-08-14 | — | — | EP | disclosed |
| US-10173975-B2 | Sulfonium compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-01-08 | — | — | US | disclosed |
| EP-3343292-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2018-07-04 | — | — | EP | disclosed |
| EP-3343291-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2018-07-04 | — | — | EP | disclosed |
| US-20180180992-A1 | Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20180180992-A1 | Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20180099928-A1 | SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-04-12 | — | — | US | disclosed |
| US-20180099928-A1 | SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-04-12 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10173975-B2 | Sulfonium compound, resist composition, and pattern forming process | C1R, LBR, SMARCC2 | FFAR1 2007/4885FFAR4 1739/4885PKM 2311/4885 |
| US-20180099928-A1 | SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | C1R, LBR, SMARCC2 | FFAR1 2007/4885FFAR4 1739/4885PKM 2311/4885 |
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SLC11A2, POLR2B, POLI | FFAR1 3945/4885FFAR4 3486/4885PKM 2948/4885 |
| US-10725377-B2 | Chemically amplified negative resist composition and resist pattern forming process | SLC11A2, POLR2B, POLI | FFAR1 3945/4885FFAR4 3486/4885PKM 2948/4885 |
| US-20180180992-A1 | Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process | POLI, POLL, SLC11A2 | FFAR1 2555/4885FFAR4 2749/4885PKM 3438/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.