SCHEMBL20215399

SCHEMBL20215399

CCC(C)(I)C(=O)Oc1cccc2c(O)c(Oc3cc(O)c4c(OC(=O)C(C)(I)CC)ccc(O)c4c3)ccc12

nearest known ligand 0.32

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ESR1 P03372 6/20 0.32
▸ ESR2 Q92731 6/20 0.32
▸ MEN1 O00255 3/20 0.32
▸ KMT2A Q03164 3/20 0.32
▸ POLB P06746 1/20 0.32
▸ EGLN2 Q96KS0 2/20 0.32
▸ EGLN1 Q9GZT9 2/20 0.32
▸ RRM1 P23921 1/20 0.31
▸ JAK2 O60674 1/20 0.31
▸ USP2 O75604 1/20 0.31
▸ GAA P10253 1/20 0.31
▸ MAPT P10636 1/20 0.31
▸ ALOX15 P16050 1/20 0.31
▸ SMN1; SMN2 Q16637 1/20 0.31
▸ NPSR1 Q6W5P4 1/20 0.31
▸ HSD17B10 Q99714 1/20 0.31
▸ CHEK1 O14757 1/20 0.30
▸ MCL1 Q07820 1/20 0.30
▸ PTGS2 P35354 1/20 0.30
▸ TYMS P04818 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18898016 0.79 ESR1 (0.32) ESR1ESR2
SCHEMBL18671905 0.77 ESR1 (0.42) ESR1ESR2MEN1KMT2APOLB
SCHEMBL18671983 0.77 ESR1 (0.49) ESR1ESR2MEN1KMT2APOLB
SCHEMBL18898015 0.73 ESR1 (0.38) ESR1ESR2MEN1KMT2APOLB
SCHEMBL18898050 0.73 PTGS2 (0.35) MEN1KMT2AEGLN2EGLN1GAA
SCHEMBL18898053 0.71 SLC6A2 (0.37) ESR1ESR2MEN1KMT2APOLB
SCHEMBL18898054 0.69 CA12 (0.37) KMT2APOLBGAAMAPTSMN1; SMN2
SCHEMBL15113865 0.69 ESR1 (0.39) ESR1ESR2MEN1KMT2APOLB
SCHEMBL18671924 0.69 ALDH1A1 (0.51) MEN1KMT2AGAAHSD17B10
SCHEMBL20215426 0.69 NQO2 (0.43) ESR1ESR2MEN1KMT2AGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10234757-B2 Polymer, making method, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-03-19 — — US disclosed
US-9989847-B2 Onium salt compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-05 — — US disclosed
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