SCHEMBL2058613

SCHEMBL2058613

CO[I+](OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
▸ CA2 P00918 16/20 0.37
▸ CA1 P00915 15/20 0.37
▸ MMP1 P03956 4/20 0.34
▸ MMP2 P08253 4/20 0.34
▸ MMP9 P14780 4/20 0.34
▸ MMP8 P22894 4/20 0.34
▸ MMP13 P45452 4/20 0.34
▸ F2 P00734 2/20 0.33
▸ PRSS1 P07477 2/20 0.33
▸ PRSS2 P07478 2/20 0.33
▸ PRSS3 P35030 2/20 0.33
▸ PIK3CD O00329 1/20 0.30
▸ PIK3CA P42336 1/20 0.30
▸ PIK3CB P42338 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL444424 0.82 CA2 (0.40) CA2CA1MMP1MMP2MMP9
SCHEMBL59304 0.82 CA2 (0.40) CA2CA1MMP1MMP2MMP9
SCHEMBL51423 0.80 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL1800748 0.79 CA1 (0.34) CA2CA1PIK3CDPIK3CAPIK3CB
SCHEMBL1804139 0.77 GAA (0.35) CA2CA1MMP1MMP2MMP9
SCHEMBL3284035 0.76 CA2 (0.36) CA2CA1MMP1MMP2MMP9
SCHEMBL1869148 0.75 CA1 (0.36) CA2CA1MMP1MMP2MMP9
SCHEMBL9421923 0.74 CA1 (0.36) CA2CA1MMP1MMP2MMP9
SCHEMBL1805423 0.74 CA1 (0.35) CA2CA1MMP1MMP2MMP9
SCHEMBL9106447 0.72 MCL1 (0.36) CA2CA1PIK3CDPIK3CAPIK3CB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9535326-B2 Methods of manufacturing a semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2017-01-03 — — US disclosed
US-20150227046-A1 METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2015-08-13 — — US disclosed
US-7968275-B2 Method of forming a pattern using a photoresist composition for immersion lithography SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 — — US disclosed
US-7781153-B2 Polymer resin composition, related method for forming a pattern, and related method for fabricating a capacitor SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-08-24 — — US disclosed
US-7670748-B2 Cyclic compound, photoresist composition and method of forming a photoresist pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-03-02 — — US disclosed
US-20090176177-A1 METHOD OF FORMING A PATTERN USING A PHOTORESIST COMPOSITION FOR IMMERSION LITHOGRAPHY SAMSUNG ELECTRONICS CO., LTD. 2009-07-09 — — US disclosed
US-20090092931-A1 Methods of forming a blocking pattern using a photosensitive composition and methods of manufacturing a semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-04-09 — — US disclosed
US-7494761-B2 Cyclodextrin derivative, photoresist composition including the cyclodextrin derivative and method of forming a pattern using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-02-24 — — US disclosed
US-7485407-B2 Siloxane compound, photoresist composition including the siloxane compound and method of forming a pattern using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-02-03 — — US disclosed
US-7442489-B2 Photoresist composition and method of forming a photoresist pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-10-28 — — US disclosed
US-20070249117-A1 Polymer resin composition, related method for forming a pattern, and related method for fabricating a capacitor SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-10-25 — — US disclosed
US-7258963-B2 Photosensitive resin, photoresist composition having the photosensitive resin and method of forming a photoresist pattern by using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-08-21 — — US disclosed
US-20070166644-A1 Photoresist composition and method of forming a photoresist pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-07-19 — — US disclosed
US-20070148590-A1 Siloxane compound, photoresist composition including the siloxane compound and method of forming a pattern using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-06-28 — — US disclosed
US-20070141511-A1 Cyclic compound, photoresist composition and method of forming a photoresist pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-06-21 — — US disclosed
US-20060188821-A1 Photosensitive resin, photoresist composition having the photosensitive resin and method of forming a photoresist pattern using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-08-24 — — US disclosed
US-20060160019-A1 Photosensitive resin, photoresist composition having the photosensitive resin and method of forming a photoresist pattern by using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-07-20 — — US disclosed
US-20060160021-A1 Photoresist composition and method of forming a photoresist pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-07-20 — — US disclosed
US-20060160020-A1 Photosensitive polymer, photoresist composition having the photosensitive polymer and method of forming a photoresist pattern using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-07-20 — — US disclosed
US-20060134549-A1 Photosensitive polymer, photoresist composition including the photosensitive polymer and method of forming a photoresist pattern using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-06-22 — — US disclosed
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