SCHEMBL2099561

SCHEMBL2099561

CCN[Si](CC)(NCC)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 1/20 0.37
TP53 P04637 1/20 0.35
NR1H2 P55055 2/20 0.33
NR1H3 Q13133 2/20 0.33
GAA P10253 2/20 0.33
KDM4E B2RXH2 2/20 0.33
SIGMAR1 Q99720 1/20 0.33
ALDH1A1 P00352 1/20 0.33
HPGD P15428 1/20 0.33
HTT P42858 1/20 0.32
ESR1 P03372 1/20 0.32
ESR2 Q92731 1/20 0.32
LMNA P02545 1/20 0.31
MAPT P10636 2/20 0.31
CYP3A4 P08684 1/20 0.30
ADORA2A P29274 1/20 0.30
ADORA1 P30542 1/20 0.30
ELANE P08246 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2102969 0.82 GAA (0.35) KCNN4TP53NR1H2NR1H3GAA
SCHEMBL2104455 0.81 TP53 (0.40) KCNN4TP53NR1H2NR1H3KDM4E
SCHEMBL2103831 0.79 NAAA (0.36) NR1H2NR1H3GAAKDM4ESIGMAR1
SCHEMBL2102236 0.77 KCNN4 (0.34) KCNN4TP53GAAKDM4ESIGMAR1
SCHEMBL2268924 0.75 KCNN4 (0.39) KCNN4TP53GAAKDM4ESIGMAR1
SCHEMBL2102177 0.75 KCNN4 (0.39) KCNN4TP53GAAKDM4ESIGMAR1
SCHEMBL233708 0.75 KCNN4 (0.39) KCNN4TP53GAAKDM4ESIGMAR1
SCHEMBL2272353 0.74 ESR1 (0.35) KCNN4TP53GAAKDM4ESIGMAR1
SCHEMBL234050 0.73 ESR1 (0.38) KCNN4TP53NR1H2NR1H3GAA
SCHEMBL2273250 0.73 ESR1 (0.38) KCNN4TP53NR1H2NR1H3GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed