SCHEMBL2102109

SCHEMBL2102109

CN(C)C(N(C)C)C(C)(C)[SiH2]c1ccccc1

nearest known ligand 0.32

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
HTR2A P28223 3/20 0.32
HRH1 P35367 3/20 0.32
AOC3 Q16853 1/20 0.32
KCNN4 O15554 1/20 0.32
KDM4E B2RXH2 1/20 0.31
ALDH1A1 P00352 1/20 0.31
MEN1 O00255 1/20 0.31
TTR P02766 1/20 0.31
KMT2A Q03164 1/20 0.31
RIPK1 Q13546 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2101441 0.86 HTR2A (0.37) HTR2AHRH1AOC3KDM4EALDH1A1
SCHEMBL2101734 0.80 MEN1 (0.33) HTR2AHRH1AOC3KCNN4MEN1
SCHEMBL2103612 0.79 ADRA2B (0.40) HTR2AHRH1AOC3KDM4EALDH1A1
SCHEMBL2103073 0.74 TSHR (0.33) RIPK1
SCHEMBL2102164 0.73 SIGMAR1 (0.35) HTR2AHRH1AOC3KCNN4MEN1
SCHEMBL2101130 0.71 HTR2A (0.32) HTR2AHRH1KCNN4MEN1KMT2A
SCHEMBL1254751 0.69 MAPK1 (0.36) KCNN4ALDH1A1KMT2A
SCHEMBL2102750 0.68 PGR (0.34) HTR2AHRH1KDM4EALDH1A1RIPK1
SCHEMBL2102686 0.68 HSP90AA1 (0.32) HTR2AHRH1KCNN4
Ethane SCHEMBL8430515 0.67 MAPK1 (0.35) ALDH1A1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed